Manipulating Reaction Rates of Metal-Oxide Heterogeneous Catalysts via Semiconductor Heterojunctions

Navaneetha K. Nandakumar, Edmund G Seebauer

Research output: Contribution to journalArticle

Abstract

Heterojunctions of metal oxide semiconductors enable the manipulation of surface chemistry for heterogeneous catalysts or sensors without introducing dopants and their attendant complications. If one of the semiconductors is sufficiently thin, charge exchange between the two semiconductors leads to charge buildup at the free surface. The excess charge influences the Lewis acid-base character of the surface and propagates into properties such as catalytic activity. Although the available literature offers evidence for such effects, published work does not outline a quantitative framework that links heterojunction behavior to catalytic activity. The present work develops and demonstrates such a framework for the oxidation of methanol to formaldehyde with a heterojunction of thin polycrystalline V 2 O 5 grown on polycrystalline anatase TiO 2 . The framework accurately reproduces activity changes by a factor of 20 in response to V 2 O 5 thickness and TiO 2 donor concentration.

Original languageEnglish (US)
Pages (from-to)16655-16663
Number of pages9
JournalJournal of Physical Chemistry C
Volume122
Issue number29
DOIs
StatePublished - Jul 26 2018

Fingerprint

Oxides
Reaction rates
metal oxides
Heterojunctions
heterojunctions
reaction kinetics
Metals
Semiconductor materials
catalysts
Catalysts
catalytic activity
Catalyst activity
Lewis Acids
Surface chemistry
formaldehyde
Formaldehyde
charge exchange
metal oxide semiconductors
anatase
Titanium dioxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

Manipulating Reaction Rates of Metal-Oxide Heterogeneous Catalysts via Semiconductor Heterojunctions. / Nandakumar, Navaneetha K.; Seebauer, Edmund G.

In: Journal of Physical Chemistry C, Vol. 122, No. 29, 26.07.2018, p. 16655-16663.

Research output: Contribution to journalArticle

@article{12fae64e1a6040109c5ce20c655dbd4e,
title = "Manipulating Reaction Rates of Metal-Oxide Heterogeneous Catalysts via Semiconductor Heterojunctions",
abstract = "Heterojunctions of metal oxide semiconductors enable the manipulation of surface chemistry for heterogeneous catalysts or sensors without introducing dopants and their attendant complications. If one of the semiconductors is sufficiently thin, charge exchange between the two semiconductors leads to charge buildup at the free surface. The excess charge influences the Lewis acid-base character of the surface and propagates into properties such as catalytic activity. Although the available literature offers evidence for such effects, published work does not outline a quantitative framework that links heterojunction behavior to catalytic activity. The present work develops and demonstrates such a framework for the oxidation of methanol to formaldehyde with a heterojunction of thin polycrystalline V 2 O 5 grown on polycrystalline anatase TiO 2 . The framework accurately reproduces activity changes by a factor of 20 in response to V 2 O 5 thickness and TiO 2 donor concentration.",
author = "Nandakumar, {Navaneetha K.} and Seebauer, {Edmund G}",
year = "2018",
month = "7",
day = "26",
doi = "10.1021/acs.jpcc.8b00712",
language = "English (US)",
volume = "122",
pages = "16655--16663",
journal = "Journal of Physical Chemistry C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "29",

}

TY - JOUR

T1 - Manipulating Reaction Rates of Metal-Oxide Heterogeneous Catalysts via Semiconductor Heterojunctions

AU - Nandakumar, Navaneetha K.

AU - Seebauer, Edmund G

PY - 2018/7/26

Y1 - 2018/7/26

N2 - Heterojunctions of metal oxide semiconductors enable the manipulation of surface chemistry for heterogeneous catalysts or sensors without introducing dopants and their attendant complications. If one of the semiconductors is sufficiently thin, charge exchange between the two semiconductors leads to charge buildup at the free surface. The excess charge influences the Lewis acid-base character of the surface and propagates into properties such as catalytic activity. Although the available literature offers evidence for such effects, published work does not outline a quantitative framework that links heterojunction behavior to catalytic activity. The present work develops and demonstrates such a framework for the oxidation of methanol to formaldehyde with a heterojunction of thin polycrystalline V 2 O 5 grown on polycrystalline anatase TiO 2 . The framework accurately reproduces activity changes by a factor of 20 in response to V 2 O 5 thickness and TiO 2 donor concentration.

AB - Heterojunctions of metal oxide semiconductors enable the manipulation of surface chemistry for heterogeneous catalysts or sensors without introducing dopants and their attendant complications. If one of the semiconductors is sufficiently thin, charge exchange between the two semiconductors leads to charge buildup at the free surface. The excess charge influences the Lewis acid-base character of the surface and propagates into properties such as catalytic activity. Although the available literature offers evidence for such effects, published work does not outline a quantitative framework that links heterojunction behavior to catalytic activity. The present work develops and demonstrates such a framework for the oxidation of methanol to formaldehyde with a heterojunction of thin polycrystalline V 2 O 5 grown on polycrystalline anatase TiO 2 . The framework accurately reproduces activity changes by a factor of 20 in response to V 2 O 5 thickness and TiO 2 donor concentration.

UR - http://www.scopus.com/inward/record.url?scp=85049655420&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85049655420&partnerID=8YFLogxK

U2 - 10.1021/acs.jpcc.8b00712

DO - 10.1021/acs.jpcc.8b00712

M3 - Article

AN - SCOPUS:85049655420

VL - 122

SP - 16655

EP - 16663

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

SN - 1932-7447

IS - 29

ER -