Magnetoresistance in single-layer graphene: Weak localization and universal conductance fluctuation studies

Yung Fu Chen, Myung Ho Bae, Cesar Chialvo, Travis Dirks, Alexey Bezryadin, Nadya Mason

Research output: Contribution to journalArticle

Abstract

We report measurements of magnetoresistance in single-layer graphene as a function of gate voltage (carrier density) at 250mK. By examining signatures of weak localization (WL) and universal conductance fluctuations (UCF), we find a consistent picture of phase coherence loss due to electron-electron interactions. The gate dependence of the elastic scattering terms suggests that the effect of trigonal warping, i.e. the nonlinearity of the dispersion curves, may be strong at high carrier densities, while intra-valley scattering may dominate close to the Dirac point. In addition, a decrease in UCF amplitude with decreasing carrier density can be explained by a corresponding loss of phase coherence.

Original languageEnglish (US)
Article number205301
JournalJournal of Physics Condensed Matter
Volume22
Issue number20
DOIs
StatePublished - Dec 1 2010

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Magnetoresistance
Graphene
Carrier concentration
graphene
phase coherence
Electron-electron interactions
Elastic scattering
valleys
elastic scattering
electron scattering
nonlinearity
signatures
Scattering
Electric potential
electric potential
curves
scattering
electrons

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Magnetoresistance in single-layer graphene : Weak localization and universal conductance fluctuation studies. / Chen, Yung Fu; Bae, Myung Ho; Chialvo, Cesar; Dirks, Travis; Bezryadin, Alexey; Mason, Nadya.

In: Journal of Physics Condensed Matter, Vol. 22, No. 20, 205301, 01.12.2010.

Research output: Contribution to journalArticle

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