TY - JOUR
T1 - Magnetoresistance in single-layer graphene
T2 - Weak localization and universal conductance fluctuation studies
AU - Chen, Yung Fu
AU - Bae, Myung Ho
AU - Chialvo, Cesar
AU - Dirks, Travis
AU - Bezryadin, Alexey
AU - Mason, Nadya
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2010
Y1 - 2010
N2 - We report measurements of magnetoresistance in single-layer graphene as a function of gate voltage (carrier density) at 250mK. By examining signatures of weak localization (WL) and universal conductance fluctuations (UCF), we find a consistent picture of phase coherence loss due to electron-electron interactions. The gate dependence of the elastic scattering terms suggests that the effect of trigonal warping, i.e. the nonlinearity of the dispersion curves, may be strong at high carrier densities, while intra-valley scattering may dominate close to the Dirac point. In addition, a decrease in UCF amplitude with decreasing carrier density can be explained by a corresponding loss of phase coherence.
AB - We report measurements of magnetoresistance in single-layer graphene as a function of gate voltage (carrier density) at 250mK. By examining signatures of weak localization (WL) and universal conductance fluctuations (UCF), we find a consistent picture of phase coherence loss due to electron-electron interactions. The gate dependence of the elastic scattering terms suggests that the effect of trigonal warping, i.e. the nonlinearity of the dispersion curves, may be strong at high carrier densities, while intra-valley scattering may dominate close to the Dirac point. In addition, a decrease in UCF amplitude with decreasing carrier density can be explained by a corresponding loss of phase coherence.
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U2 - 10.1088/0953-8984/22/20/205301
DO - 10.1088/0953-8984/22/20/205301
M3 - Article
C2 - 21393703
AN - SCOPUS:77955676149
SN - 0953-8984
VL - 22
JO - Journal of Physics Condensed Matter
JF - Journal of Physics Condensed Matter
IS - 20
M1 - 205301
ER -