Magnetoresistance anomalies in (Ga,Mn)As epilayers with perpendicular magnetic anisotropy

G. Xiang, A. W. Holleitner, B. L. Sheu, F. M. Mendoza, O. Maksimov, M. B. Stone, P. Schiffer, D. D. Awschalom, N. Samarth

Research output: Contribution to journalArticlepeer-review

Abstract

We report the observation of anomalies in the longitudinal magnetoresistance of tensile-strained Ga1-xMnxAs epilayers with perpendicular magnetic anisotropy. Magnetoresistance measurements carried out in the planar geometry (magnetic field parallel to the current density) reveal "spikes" that are antisymmetric with respect to the direction of the magnetic field. These anomalies always occur during magnetization reversal, as indicated by a simultaneous change in sign of the anomalous Hall effect. The data suggest that the antisymmetric anomalies originate in anomalous Hall effect contributions to the longitudinal resistance when domain walls are located between the voltage probes. This interpretation is reinforced by carrying out angular sweeps of H, revealing an antisymmetric dependence on the helicity of the field sweep.

Original languageEnglish (US)
Article number241307
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume71
Issue number24
DOIs
StatePublished - Jun 15 2005

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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