Magnetic density gap in the quantum Hall regime

S. W. Johnston, J. P. Leburton, Y. Lyanda-Geller

Research output: Contribution to journalArticlepeer-review


In conventional AlGaAs/GaAs heterostructures, there is a residual quantum Hall effect in the limit of quenched disorder. This residual effect is due to the existence of a magnetic density gap (MDG) which arises in the Fermi level transition between two Landau levels. Self-consistent calculation of the electronic properties of the two-dimensional system taking into account Zeeman splitting and the Ando-Uemura exchange energy shows that the MDG is strongly dependent on the filling factor as well as on temperature and barrier capacitance. It also reveals a strong enhancement of the g*-factor in agreement with the data of Usher et al. Phys. Rev. B, 41, 1129 (1990).

Original languageEnglish (US)
Pages (from-to)65-73
Number of pages9
JournalSuperlattices and Microstructures
Issue number1
StatePublished - Jun 1996

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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