TY - JOUR
T1 - Magnetic anisotropy in single-crystalline antiferromagnetic Mn2Au
AU - Gebre, Mebatsion S.
AU - Banner, Rebecca K.
AU - Kang, Kisung
AU - Qu, Kejian
AU - Cao, Huibo
AU - Schleife, André
AU - Shoemaker, Daniel P.
N1 - Publisher Copyright:
© 2024 American Physical Society.
PY - 2024/8
Y1 - 2024/8
N2 - Multiple recent studies have identified the metallic antiferromagnet Mn2Au to be a candidate for spintronic applications due to apparent in-plane anisotropy, preserved magnetic properties above room temperature, and current-induced Néel vector switching. Crystal growth is complicated by the fact that Mn2Au melts incongruently. We present a bismuth flux method to grow millimeter-scale bulk single crystals of Mn2Au in order to examine the intrinsic anisotropic electrical and magnetic properties. Flux quenching experiments reveal that the Mn2Au crystals precipitate below 550∘C, about 100∘C below the decomposition temperature of Mn2Au. Bulk Mn2Au crystals have a room-temperature resistivity of 16-19 μωcm and a residual resistivity ratio of 41. Mn2Au crystals have a dimensionless susceptibility on the order of 10-4 (SI units), comparable to calculated and experimental reports on powder samples. Single-crystal neutron diffraction confirms the in-plane magnetic structure. The tetragonal symmetry of Mn2Au constrains the ab-plane magnetic susceptibility to be constant, meaning that χ100=χ110 in the low-field limit, below any spin-flop transition. We find that three measured magnetic susceptibilities χ100, χ110, and χ001 are the same order of magnitude and agree with the calculated prediction, meaning the low-field susceptibility of Mn2Au is quite isotropic, despite clear differences in ab-plane and ac-plane magnetocrystalline anisotropy. Mn2Au is calculated to have an extremely high in-plane spin-flop field above 30 T, which is much larger than that of another in-plane antiferromagnet, Fe2As (less than 1 T). The subtle anisotropy of intrinsic susceptibilities may lead to dominating effects from shape, crystalline texture, strain, and defects in devices that attempt spin readout in Mn2Au.
AB - Multiple recent studies have identified the metallic antiferromagnet Mn2Au to be a candidate for spintronic applications due to apparent in-plane anisotropy, preserved magnetic properties above room temperature, and current-induced Néel vector switching. Crystal growth is complicated by the fact that Mn2Au melts incongruently. We present a bismuth flux method to grow millimeter-scale bulk single crystals of Mn2Au in order to examine the intrinsic anisotropic electrical and magnetic properties. Flux quenching experiments reveal that the Mn2Au crystals precipitate below 550∘C, about 100∘C below the decomposition temperature of Mn2Au. Bulk Mn2Au crystals have a room-temperature resistivity of 16-19 μωcm and a residual resistivity ratio of 41. Mn2Au crystals have a dimensionless susceptibility on the order of 10-4 (SI units), comparable to calculated and experimental reports on powder samples. Single-crystal neutron diffraction confirms the in-plane magnetic structure. The tetragonal symmetry of Mn2Au constrains the ab-plane magnetic susceptibility to be constant, meaning that χ100=χ110 in the low-field limit, below any spin-flop transition. We find that three measured magnetic susceptibilities χ100, χ110, and χ001 are the same order of magnitude and agree with the calculated prediction, meaning the low-field susceptibility of Mn2Au is quite isotropic, despite clear differences in ab-plane and ac-plane magnetocrystalline anisotropy. Mn2Au is calculated to have an extremely high in-plane spin-flop field above 30 T, which is much larger than that of another in-plane antiferromagnet, Fe2As (less than 1 T). The subtle anisotropy of intrinsic susceptibilities may lead to dominating effects from shape, crystalline texture, strain, and defects in devices that attempt spin readout in Mn2Au.
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U2 - 10.1103/PhysRevMaterials.8.084413
DO - 10.1103/PhysRevMaterials.8.084413
M3 - Article
AN - SCOPUS:85203601151
SN - 2475-9953
VL - 8
JO - Physical Review Materials
JF - Physical Review Materials
IS - 8
M1 - 084413
ER -