Low voltage field emission from PbZr0.2Ti0.8O 3-coated silicon nanotips

P. C. Fletcher, R. V.K. Mangalam, L. W. Martin, W. P. King

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report field emission from nanometer-sharp tips of polarized PbZr 0.2Ti0.8O3 (PZT) and silicon. The ferroelectric PZT emitters are a high-density array of single-crystal silicon tips that are coated with a 30 nm thick film of crystalline PZT in a batch fabrication process. The PZT emitter tips begin to emit electrons at fields as low as 2 V/μm and reach threshold emission at fields as low as 3.9 V/μm. This is considerably lower than the threshold field of 7.2 V/μm for uncoated silicon emitter tips. This improvement is about one order of magnitude improvement over previous publications for silicon tips. Using a Fowler-Nordheim analysis, we calculate the effective work function of the PZT film to be 1.00 eV and the field amplification factor to be 1525.

Original languageEnglish (US)
Title of host publicationIEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013
Pages437-440
Number of pages4
DOIs
StatePublished - 2013
EventIEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013 - Taipei, Taiwan, Province of China
Duration: Jan 20 2013Jan 24 2013

Publication series

NameProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN (Print)1084-6999

Other

OtherIEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013
Country/TerritoryTaiwan, Province of China
CityTaipei
Period1/20/131/24/13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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