@inproceedings{d6a668f9231e46819bdbe1d4c2713d79,
title = "Low voltage field emission from PbZr0.2Ti0.8O 3-coated silicon nanotips",
abstract = "We report field emission from nanometer-sharp tips of polarized PbZr 0.2Ti0.8O3 (PZT) and silicon. The ferroelectric PZT emitters are a high-density array of single-crystal silicon tips that are coated with a 30 nm thick film of crystalline PZT in a batch fabrication process. The PZT emitter tips begin to emit electrons at fields as low as 2 V/μm and reach threshold emission at fields as low as 3.9 V/μm. This is considerably lower than the threshold field of 7.2 V/μm for uncoated silicon emitter tips. This improvement is about one order of magnitude improvement over previous publications for silicon tips. Using a Fowler-Nordheim analysis, we calculate the effective work function of the PZT film to be 1.00 eV and the field amplification factor to be 1525.",
author = "Fletcher, {P. C.} and Mangalam, {R. V.K.} and Martin, {L. W.} and King, {W. P.}",
year = "2013",
doi = "10.1109/MEMSYS.2013.6474272",
language = "English (US)",
isbn = "9781467356558",
series = "Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",
pages = "437--440",
booktitle = "IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013",
note = "IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013 ; Conference date: 20-01-2013 Through 24-01-2013",
}