Low threshold voltage vertical-cavity lasers fabricated by selective oxidation

K. D. Choquette; R. P. Schneider; K. L. Lear; K. M. Geib

doi:10.1049/el:19941421

Low threshold voltage vertical-cavity lasers fabricated by selective oxidation

K. D. Choquette, R. P. Schneider, K. L. Lear, K. M. Geib

Research output: Contribution to journal › Article › peer-review

Abstract

Novel vertical-cavity surface emitting lasers fabricated using selective oxidation to form a current aperture under a top monolithic distributed Bragg reflector mirror are reported. Large cross-sectional area lasers (259μm²) exhibit threshold current densities of 150A/cm²per quantum well and record low threshold voltage of 1.33V. Smaller lasers (36,μm-) possess threshold currents of 900μA with maximum output powers greater than 1mW. The record performance of these oxidised vertical-cavity lasers arises from the low mirror series resistance and very efficient current injection into the active region.

Original language	English (US)
Pages (from-to)	2043-2044
Number of pages	2
Journal	Electronics Letters
Volume	30
Issue number	24
DOIs	https://doi.org/10.1049/el:19941421
State	Published - Nov 24 1994
Externally published	Yes

Keywords

Oxidation
Vertical cavity surface emitting lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19941421

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abstract = "Novel vertical-cavity surface emitting lasers fabricated using selective oxidation to form a current aperture under a top monolithic distributed Bragg reflector mirror are reported. Large cross-sectional area lasers (259μm2) exhibit threshold current densities of 150A/cm2per quantum well and record low threshold voltage of 1.33V. Smaller lasers (36,μm-) possess threshold currents of 900μA with maximum output powers greater than 1mW. The record performance of these oxidised vertical-cavity lasers arises from the low mirror series resistance and very efficient current injection into the active region.",

keywords = "Oxidation, Vertical cavity surface emitting lasers",

author = "Choquette, {K. D.} and Schneider, {R. P.} and Lear, {K. L.} and Geib, {K. M.}",

year = "1994",

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T1 - Low threshold voltage vertical-cavity lasers fabricated by selective oxidation

AU - Choquette, K. D.

AU - Schneider, R. P.

AU - Lear, K. L.

AU - Geib, K. M.

PY - 1994/11/24

Y1 - 1994/11/24

N2 - Novel vertical-cavity surface emitting lasers fabricated using selective oxidation to form a current aperture under a top monolithic distributed Bragg reflector mirror are reported. Large cross-sectional area lasers (259μm2) exhibit threshold current densities of 150A/cm2per quantum well and record low threshold voltage of 1.33V. Smaller lasers (36,μm-) possess threshold currents of 900μA with maximum output powers greater than 1mW. The record performance of these oxidised vertical-cavity lasers arises from the low mirror series resistance and very efficient current injection into the active region.

AB - Novel vertical-cavity surface emitting lasers fabricated using selective oxidation to form a current aperture under a top monolithic distributed Bragg reflector mirror are reported. Large cross-sectional area lasers (259μm2) exhibit threshold current densities of 150A/cm2per quantum well and record low threshold voltage of 1.33V. Smaller lasers (36,μm-) possess threshold currents of 900μA with maximum output powers greater than 1mW. The record performance of these oxidised vertical-cavity lasers arises from the low mirror series resistance and very efficient current injection into the active region.

KW - Oxidation

KW - Vertical cavity surface emitting lasers

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JF - Electronics Letters

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Low threshold voltage vertical-cavity lasers fabricated by selective oxidation

Abstract

Keywords

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