Low-threshold InP quantum dot and InGaP quantum well visible lasers on silicon (001)

Monolithically combining silicon nitride (SiNx) photonics technology with III-V active devices could open a broad range of on-chip applications spanning a wide wavelength range of ~400-4000 nm.With the development of nitride, arsenide, and antimonide lasers based on quantum well (QW) and quantum dot (QD) active regions, the wavelength palette of integrated III-V lasers on Si currently spans 400 nm to 11 μm, with a crucial gap in the red-wavelength regime of 630-750 nm.Here, we demonstrate red In0.6Ga0.4 PQWand far-red InPQDlasers monolithically grown on CMOS compatible Si (001) substrates with continuous-wave operation at room temperature. A low-threshold current density of 550 A=cm2 and 690 A=cm2 with emission at 680-730nmwas achieved for QW and QD lasers on Si, respectively. This work represents a step toward the integration of visible red lasers on Si, allowing the utilization of integrated photonics for applications including biophotonic sensing, quantum computing, and near-eye displays.