Low threshold, CW, room temperature 1.50 μm GaAS-based lasers

S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, J. S. Harris

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present the first continuous wave (CW) 1.50 μm lasers grown on GaAs substrates. These GaInNAsSb lasers operated CW at room temperature with threshold current densities as low as 1.06 kA/cm2 and output powers as high as 140 mW. Peak output power was limited by thermal dissipation and up to 670 mW was obtained under pulsed conditions. The CW slope efficiency was 0.26 W/A, corresponding to an external quantum efficiency of 31%. The lasers also featured high CW characteristic temperatures of 139 K over the range 10-60 °C, making them ideal for use in uncooled optical communication networks.

Original languageEnglish (US)
Title of host publication2003 30th International Symposium on Compound Semiconductors, ISCS 2003
Subtitle of host publicationPost-Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages180-184
Number of pages5
ISBN (Electronic)0780386140
DOIs
StatePublished - Jan 1 2003
Externally publishedYes
Event30th International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
Duration: Aug 25 2003Aug 27 2003

Publication series

NameIEEE International Symposium on Compound Semiconductors, Proceedings
Volume2003-August

Other

Other30th International Symposium on Compound Semiconductors, ISCS 2003
CountryUnited States
CitySan Diego
Period8/25/038/27/03

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Low threshold, CW, room temperature 1.50 μm GaAS-based lasers'. Together they form a unique fingerprint.

  • Cite this

    Bank, S. R., Wistey, M. A., Yuen, H. B., Goddard, L. L., & Harris, J. S. (2003). Low threshold, CW, room temperature 1.50 μm GaAS-based lasers. In 2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings (pp. 180-184). [1354451] (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCSPC.2003.1354451