@inproceedings{26317f40fd7340b4b105266c4b6810f6,
title = "Low threshold, CW, room temperature 1.50 μm GaAS-based lasers",
abstract = "We present the first continuous wave (CW) 1.50 μm lasers grown on GaAs substrates. These GaInNAsSb lasers operated CW at room temperature with threshold current densities as low as 1.06 kA/cm2 and output powers as high as 140 mW. Peak output power was limited by thermal dissipation and up to 670 mW was obtained under pulsed conditions. The CW slope efficiency was 0.26 W/A, corresponding to an external quantum efficiency of 31%. The lasers also featured high CW characteristic temperatures of 139 K over the range 10-60 °C, making them ideal for use in uncooled optical communication networks.",
author = "Bank, {S. R.} and Wistey, {M. A.} and Yuen, {H. B.} and Goddard, {L. L.} and Harris, {J. S.}",
note = "Funding Information: The authors are indebted to S. Zou of Santur Corporation for assistance in wafer thinning, as well as W.H a and V. Sabnis for many enlightening discussions. The authors also acknowledge A. Mot0 of Sumitomo Electric Industries for helpful discussions and donation of substrates. This work was supported under DARPA and ARO contracts MDA972-00-1-024, DAAD17-02-C-0101 and DAAD199-02-1-0184, ONR contract NOOO14-01-1-00100, as well as the Stanford Network Research Center (SNRC). Funding Information: The authors are indebted to S. Zou of Santur Corporation for assistance in wafer thinning, as well as W. Ha and V. Sabnis for many enlightening discussions. The authors also acknowledge A. Moto of Sumitomo Electric Industries for helpful discussions and donation of substrates. This work was supported under DARPA and ARO contracts MDA972-00-1-024, DAAD17-02-C-0101 and DAAD 199-02-1-0184, ONR contract N00014-01-1-00100, as well as the Stanford Network Research Center (SNRC).; 30th International Symposium on Compound Semiconductors, ISCS 2003 ; Conference date: 25-08-2003 Through 27-08-2003",
year = "2003",
doi = "10.1109/ISCSPC.2003.1354451",
language = "English (US)",
series = "IEEE International Symposium on Compound Semiconductors, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "180--184",
booktitle = "2003 30th International Symposium on Compound Semiconductors, ISCS 2003",
address = "United States",
}