Low threshold, CW, room temperature 1.49 μm GaAs-based lasers

S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, J. S. Harris

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present, for the first time, a CW 1.5 μm range GaInNAs(Sb) laser with threshold current density comparable to 1.3 μm range GaInNAs laser. The lasers used in this study were conventional ridge waveguide devices. The devices were grown by solid source molecular beam epitaxy (MBE) with nitrogen supplied rf plasma cell. The active region was nominally based on a QW with room temperature (RT) photoluminescence (PL) at 1.43 μm and line width of 29.7 meV.

Original languageEnglish (US)
Title of host publication2003 International Symposium on Compound Semiconductors, ISCS 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages74-75
Number of pages2
ISBN (Electronic)0780378202
DOIs
StatePublished - Jan 1 2003
Externally publishedYes
Event2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
Duration: Aug 25 2003Aug 27 2003

Publication series

NameIEEE International Symposium on Compound Semiconductors, Proceedings
Volume2003-January

Other

Other2003 International Symposium on Compound Semiconductors, ISCS 2003
CountryUnited States
CitySan Diego
Period8/25/038/27/03

Keywords

  • Molecular beam epitaxial growth
  • Nitrogen
  • Plasma density
  • Plasma devices
  • Plasma sources
  • Plasma temperature
  • Plasma waves
  • Solids
  • Threshold current
  • Waveguide lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Bank, S. R., Wistey, M. A., Yuen, H. B., Goddard, L. L., & Harris, J. S. (2003). Low threshold, CW, room temperature 1.49 μm GaAs-based lasers. In 2003 International Symposium on Compound Semiconductors, ISCS 2003 (pp. 74-75). [1239913] (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239913