@inproceedings{875fa2d04a6342f29c43ac3af7cb48e0,
title = "Low threshold, CW, room temperature 1.49 μm GaAs-based lasers",
abstract = "We present, for the first time, a CW 1.5 μm range GaInNAs(Sb) laser with threshold current density comparable to 1.3 μm range GaInNAs laser. The lasers used in this study were conventional ridge waveguide devices. The devices were grown by solid source molecular beam epitaxy (MBE) with nitrogen supplied rf plasma cell. The active region was nominally based on a QW with room temperature (RT) photoluminescence (PL) at 1.43 μm and line width of 29.7 meV.",
keywords = "Molecular beam epitaxial growth, Nitrogen, Plasma density, Plasma devices, Plasma sources, Plasma temperature, Plasma waves, Solids, Threshold current, Waveguide lasers",
author = "Bank, {S. R.} and Wistey, {M. A.} and Yuen, {H. B.} and Goddard, {L. L.} and Harris, {J. S.}",
note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 International Symposium on Compound Semiconductors, ISCS 2003 ; Conference date: 25-08-2003 Through 27-08-2003",
year = "2003",
doi = "10.1109/ISCS.2003.1239913",
language = "English (US)",
series = "IEEE International Symposium on Compound Semiconductors, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "74--75",
booktitle = "2003 International Symposium on Compound Semiconductors, ISCS 2003",
address = "United States",
}