Abstract
Low-threshold room temperature continuous wave 1.49 μm GaInNAsSb lasers were studied. Room temperature threshold current density of 1.1 kA/cm 2 was observed with a high external quantum efficiency of 40% and maximum output power of 30 mW from both facets. The results showed a record high external efficiency of 0.34 W/A.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1445-1446 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 39 |
| Issue number | 20 |
| DOIs | |
| State | Published - Oct 2 2003 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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