Low-threshold CW GaInNAsSb/GaAs laser at 1.49 μm

S. R. Bank; M. A. Wistey; H. B. Yuen; L. L. Goddard; W. Ha; J. S. Harris

doi:10.1049/el:20030928

Low-threshold CW GaInNAsSb/GaAs laser at 1.49 μm

S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, W. Ha, J. S. Harris

Research output: Contribution to journal › Article › peer-review

Abstract

Low-threshold room temperature continuous wave 1.49 μm GaInNAsSb lasers were studied. Room temperature threshold current density of 1.1 kA/cm ² was observed with a high external quantum efficiency of 40% and maximum output power of 30 mW from both facets. The results showed a record high external efficiency of 0.34 W/A.

Original language	English (US)
Pages (from-to)	1445-1446
Number of pages	2
Journal	Electronics Letters
Volume	39
Issue number	20
DOIs	https://doi.org/10.1049/el:20030928
State	Published - Oct 2 2003
Externally published	Yes

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Electrical and Electronic Engineering

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10.1049/el:20030928

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title = "Low-threshold CW GaInNAsSb/GaAs laser at 1.49 μm",

abstract = "Low-threshold room temperature continuous wave 1.49 μm GaInNAsSb lasers were studied. Room temperature threshold current density of 1.1 kA/cm 2 was observed with a high external quantum efficiency of 40% and maximum output power of 30 mW from both facets. The results showed a record high external efficiency of 0.34 W/A.",

author = "Bank, {S. R.} and Wistey, {M. A.} and Yuen, {H. B.} and Goddard, {L. L.} and W. Ha and Harris, {J. S.}",

year = "2003",

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T1 - Low-threshold CW GaInNAsSb/GaAs laser at 1.49 μm

AU - Bank, S. R.

AU - Wistey, M. A.

AU - Yuen, H. B.

AU - Goddard, L. L.

AU - Ha, W.

AU - Harris, J. S.

PY - 2003/10/2

Y1 - 2003/10/2

N2 - Low-threshold room temperature continuous wave 1.49 μm GaInNAsSb lasers were studied. Room temperature threshold current density of 1.1 kA/cm 2 was observed with a high external quantum efficiency of 40% and maximum output power of 30 mW from both facets. The results showed a record high external efficiency of 0.34 W/A.

AB - Low-threshold room temperature continuous wave 1.49 μm GaInNAsSb lasers were studied. Room temperature threshold current density of 1.1 kA/cm 2 was observed with a high external quantum efficiency of 40% and maximum output power of 30 mW from both facets. The results showed a record high external efficiency of 0.34 W/A.

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Low-threshold CW GaInNAsSb/GaAs laser at 1.49 μm

Abstract

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