Low-threshold CW GaInNAsSb/GaAs laser at 1.49 μm

S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, W. Ha, J. S. Harris

Research output: Contribution to journalArticlepeer-review


Low-threshold room temperature continuous wave 1.49 μm GaInNAsSb lasers were studied. Room temperature threshold current density of 1.1 kA/cm 2 was observed with a high external quantum efficiency of 40% and maximum output power of 30 mW from both facets. The results showed a record high external efficiency of 0.34 W/A.

Original languageEnglish (US)
Pages (from-to)1445-1446
Number of pages2
JournalElectronics Letters
Issue number20
StatePublished - Oct 2 2003
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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