Low-threshold CW GaInNAsSb/GaAs laser at 1.49 μm

S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, W. Ha, J. S. Harris

Research output: Contribution to journalArticle

Abstract

Low-threshold room temperature continuous wave 1.49 μm GaInNAsSb lasers were studied. Room temperature threshold current density of 1.1 kA/cm 2 was observed with a high external quantum efficiency of 40% and maximum output power of 30 mW from both facets. The results showed a record high external efficiency of 0.34 W/A.

Original languageEnglish (US)
Pages (from-to)1445-1446
Number of pages2
JournalElectronics Letters
Volume39
Issue number20
DOIs
StatePublished - Oct 2 2003
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Bank, S. R., Wistey, M. A., Yuen, H. B., Goddard, L. L., Ha, W., & Harris, J. S. (2003). Low-threshold CW GaInNAsSb/GaAs laser at 1.49 μm. Electronics Letters, 39(20), 1445-1446. https://doi.org/10.1049/el:20030928