@inproceedings{d5123214d54e4c879bc94af8e88629e8,
title = "Low-threshold continuous-wave 1.55-μm GaInNAsSb lasers",
abstract = "We present the first low-threshold 1.55-μm lasers grown on GaAs. The active layer was a single GaInNAsSb quantum well surrounded by strain-compensating GaNAs barriers. The room-temperature, continuous-wave, threshold current density was 579 A/cm2 and peak output power was 130 mW.",
author = "Bank, \{S. R.\} and Bae, \{H. P.\} and Yuen, \{H. B.\} and Wistey, \{M. A.\} and Goddard, \{L. L.\} and Harris, \{J. S.\} and R. Kudrawiec and M. Gladysiewicz and M. Motyka and J. Misiewicz",
year = "2006",
doi = "10.1109/CLEO.2006.4628314",
language = "English (US)",
isbn = "1557528136",
series = "Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006",
booktitle = "Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006",
note = "Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 ; Conference date: 21-05-2006 Through 26-05-2006",
}