Low threshold buried heterostructure vertical cavity surface emitting laser

C. J. Chang-Hasnain, Y. A. Wu, G. S. Li, G. Hasnain, K. D. Choquete, C. Caneau, L. T. Florez

Research output: Contribution to journalArticle

Abstract

We report the first low threshold, buried heterostructure (BH) vertical cavity surface emitting laser (VCSEL) using organometallic chemical vapor deposition regrowth. Very low threshold current of 0.8 mA and threshold current density of 490 A/cm2 are achieved with 8 and 32 μm diam BH VCSELs, respectively. Both 8 and 16 μm diam BH VCSELs emit a single TEM00 fundamental mode for current levels many times thresholds. Most single-mode emissions are linearly polarized with a predetermined direction in the [01̄1] crystal orientation.

Original languageEnglish (US)
Pages (from-to)1307-1309
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number10
DOIs
StatePublished - Dec 1 1993
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Chang-Hasnain, C. J., Wu, Y. A., Li, G. S., Hasnain, G., Choquete, K. D., Caneau, C., & Florez, L. T. (1993). Low threshold buried heterostructure vertical cavity surface emitting laser. Applied Physics Letters, 63(10), 1307-1309. https://doi.org/10.1063/1.109713