Low threshold buried heterostructure vertical cavity surface emitting laser

C. J. Chang-Hasnain; Y. A. Wu; G. S. Li; G. Hasnain; K. D. Choquete; C. Caneau; L. T. Florez

doi:10.1063/1.109713

Low threshold buried heterostructure vertical cavity surface emitting laser

C. J. Chang-Hasnain, Y. A. Wu, G. S. Li, G. Hasnain, K. D. Choquete, C. Caneau, L. T. Florez

Research output: Contribution to journal › Article › peer-review

Abstract

We report the first low threshold, buried heterostructure (BH) vertical cavity surface emitting laser (VCSEL) using organometallic chemical vapor deposition regrowth. Very low threshold current of 0.8 mA and threshold current density of 490 A/cm² are achieved with 8 and 32 μm diam BH VCSELs, respectively. Both 8 and 16 μm diam BH VCSELs emit a single TEM₀₀ fundamental mode for current levels many times thresholds. Most single-mode emissions are linearly polarized with a predetermined direction in the [01̄1] crystal orientation.

Original language	English (US)
Pages (from-to)	1307-1309
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	10
DOIs	https://doi.org/10.1063/1.109713
State	Published - 1993
Externally published	Yes

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Physics and Astronomy (miscellaneous)

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10.1063/1.109713

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title = "Low threshold buried heterostructure vertical cavity surface emitting laser",

abstract = "We report the first low threshold, buried heterostructure (BH) vertical cavity surface emitting laser (VCSEL) using organometallic chemical vapor deposition regrowth. Very low threshold current of 0.8 mA and threshold current density of 490 A/cm2 are achieved with 8 and 32 μm diam BH VCSELs, respectively. Both 8 and 16 μm diam BH VCSELs emit a single TEM00 fundamental mode for current levels many times thresholds. Most single-mode emissions are linearly polarized with a predetermined direction in the [0{\=1}1] crystal orientation.",

author = "Chang-Hasnain, {C. J.} and Wu, {Y. A.} and Li, {G. S.} and G. Hasnain and Choquete, {K. D.} and C. Caneau and Florez, {L. T.}",

year = "1993",

doi = "10.1063/1.109713",

language = "English (US)",

volume = "63",

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journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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AU - Chang-Hasnain, C. J.

AU - Wu, Y. A.

AU - Li, G. S.

AU - Hasnain, G.

AU - Choquete, K. D.

AU - Caneau, C.

AU - Florez, L. T.

PY - 1993

Y1 - 1993

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AB - We report the first low threshold, buried heterostructure (BH) vertical cavity surface emitting laser (VCSEL) using organometallic chemical vapor deposition regrowth. Very low threshold current of 0.8 mA and threshold current density of 490 A/cm2 are achieved with 8 and 32 μm diam BH VCSELs, respectively. Both 8 and 16 μm diam BH VCSELs emit a single TEM00 fundamental mode for current levels many times thresholds. Most single-mode emissions are linearly polarized with a predetermined direction in the [01̄1] crystal orientation.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

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Low threshold buried heterostructure vertical cavity surface emitting laser

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