Nanometer scale Ge2 Sb2 Te5 (GST) domains formed by immiscible mixture of GST-SiOx at room temperature and 180 °C show remarkable suppression in electrical and thermal conductivity. Thermal boundary resistance with increased GST-SiOx interface becomes crucial to the reduction in thermal conductivity. These conductivity reductions concurrently result in the reduction in programming current and power consumption in phase change memory devices.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)