Nanometer scale Ge2 Sb2 Te5 (GST) domains formed by immiscible mixture of GST-SiOx at room temperature and 180 °C show remarkable suppression in electrical and thermal conductivity. Thermal boundary resistance with increased GST-SiOx interface becomes crucial to the reduction in thermal conductivity. These conductivity reductions concurrently result in the reduction in programming current and power consumption in phase change memory devices.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - 2009|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)