Low thermal conductivity in Ge2 Sb2 Te5 - SiOx for phase change memory devices

Tae Yon Lee, Kijoon H.P. Kim, Dong Seok Suh, Cheolkyu Kim, Youn Seon Kang, David G Cahill, Dongbok Lee, Min Hyun Lee, Min Ho Kwon, Ki Bum Kim, Yoonho Khang

Research output: Contribution to journalArticle

Abstract

Nanometer scale Ge2 Sb2 Te5 (GST) domains formed by immiscible mixture of GST-SiOx at room temperature and 180 °C show remarkable suppression in electrical and thermal conductivity. Thermal boundary resistance with increased GST-SiOx interface becomes crucial to the reduction in thermal conductivity. These conductivity reductions concurrently result in the reduction in programming current and power consumption in phase change memory devices.

Original languageEnglish (US)
Article number243103
JournalApplied Physics Letters
Volume94
Issue number24
DOIs
StatePublished - Jun 29 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Low thermal conductivity in Ge2 Sb2 Te5 - SiOx for phase change memory devices'. Together they form a unique fingerprint.

  • Cite this

    Lee, T. Y., Kim, K. H. P., Suh, D. S., Kim, C., Kang, Y. S., Cahill, D. G., Lee, D., Lee, M. H., Kwon, M. H., Kim, K. B., & Khang, Y. (2009). Low thermal conductivity in Ge2 Sb2 Te5 - SiOx for phase change memory devices. Applied Physics Letters, 94(24), [243103]. https://doi.org/10.1063/1.3155202