Low-temperature polycrystalline silicon thin-film transistors and circuits on flexible substrates

P. C. Van Der Wilt, M. G. Kane, A. B. Limanov, A. H. Firester, L. Goodman, J. Lee, J. R. Abelson, A. M. Chitu, James S. Im

Research output: Contribution to journalReview article

Abstract

Low-defect-density polycrystalline Si on flexible substrates can be instrumental in realizing the full potential of macroelectronics. Direct deposition or solid-phase crystallization techniques are often incompatible with polymers and produce materials with high defect densities Excimer-laser annealing is capable of producing films of reasonable quality directly on polymer and metallic substrates. Sequential lateral solidification (SLS) is an advanced pulsed-laser-crystallization technique capable of producing Si films on polymers with lower defect density than can be obtained via excimer-laser annealing. Circuits built directly on polymers using these SLS films show the highest performance reported to date.

Original languageEnglish (US)
Pages (from-to)461-465
Number of pages5
JournalMRS Bulletin
Volume31
Issue number6
DOIs
StatePublished - Jun 2006
Externally publishedYes

Keywords

  • Crystalline
  • Microelectronics
  • Polycrystal
  • Si

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry

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  • Cite this

    Van Der Wilt, P. C., Kane, M. G., Limanov, A. B., Firester, A. H., Goodman, L., Lee, J., Abelson, J. R., Chitu, A. M., & Im, J. S. (2006). Low-temperature polycrystalline silicon thin-film transistors and circuits on flexible substrates. MRS Bulletin, 31(6), 461-465. https://doi.org/10.1557/mrs2006.119