Low-temperature polycrystalline silicon thin-film transistors and circuits on flexible substrates

P. C. Van Der Wilt, M. G. Kane, A. B. Limanov, A. H. Firester, L. Goodman, J. Lee, J. R. Abelson, A. M. Chitu, James S. Im

Research output: Contribution to journalReview article

Abstract

Low-defect-density polycrystalline Si on flexible substrates can be instrumental in realizing the full potential of macroelectronics. Direct deposition or solid-phase crystallization techniques are often incompatible with polymers and produce materials with high defect densities Excimer-laser annealing is capable of producing films of reasonable quality directly on polymer and metallic substrates. Sequential lateral solidification (SLS) is an advanced pulsed-laser-crystallization technique capable of producing Si films on polymers with lower defect density than can be obtained via excimer-laser annealing. Circuits built directly on polymers using these SLS films show the highest performance reported to date.

Original languageEnglish (US)
Pages (from-to)461-465
Number of pages5
JournalMRS Bulletin
Volume31
Issue number6
DOIs
StatePublished - Jun 2006

Fingerprint

Thin film circuits
Thin film transistors
Polysilicon
Defect density
Polymers
transistors
laser annealing
polymers
Excimer lasers
silicon
Substrates
thin films
Crystallization
excimer lasers
solidification
Solidification
defects
Annealing
crystallization
Temperature

Keywords

  • Crystalline
  • Microelectronics
  • Polycrystal
  • Si

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry

Cite this

Van Der Wilt, P. C., Kane, M. G., Limanov, A. B., Firester, A. H., Goodman, L., Lee, J., ... Im, J. S. (2006). Low-temperature polycrystalline silicon thin-film transistors and circuits on flexible substrates. MRS Bulletin, 31(6), 461-465. https://doi.org/10.1557/mrs2006.119

Low-temperature polycrystalline silicon thin-film transistors and circuits on flexible substrates. / Van Der Wilt, P. C.; Kane, M. G.; Limanov, A. B.; Firester, A. H.; Goodman, L.; Lee, J.; Abelson, J. R.; Chitu, A. M.; Im, James S.

In: MRS Bulletin, Vol. 31, No. 6, 06.2006, p. 461-465.

Research output: Contribution to journalReview article

Van Der Wilt, PC, Kane, MG, Limanov, AB, Firester, AH, Goodman, L, Lee, J, Abelson, JR, Chitu, AM & Im, JS 2006, 'Low-temperature polycrystalline silicon thin-film transistors and circuits on flexible substrates', MRS Bulletin, vol. 31, no. 6, pp. 461-465. https://doi.org/10.1557/mrs2006.119
Van Der Wilt PC, Kane MG, Limanov AB, Firester AH, Goodman L, Lee J et al. Low-temperature polycrystalline silicon thin-film transistors and circuits on flexible substrates. MRS Bulletin. 2006 Jun;31(6):461-465. https://doi.org/10.1557/mrs2006.119
Van Der Wilt, P. C. ; Kane, M. G. ; Limanov, A. B. ; Firester, A. H. ; Goodman, L. ; Lee, J. ; Abelson, J. R. ; Chitu, A. M. ; Im, James S. / Low-temperature polycrystalline silicon thin-film transistors and circuits on flexible substrates. In: MRS Bulletin. 2006 ; Vol. 31, No. 6. pp. 461-465.
@article{785d968372f648389cf36b621c694b8c,
title = "Low-temperature polycrystalline silicon thin-film transistors and circuits on flexible substrates",
abstract = "Low-defect-density polycrystalline Si on flexible substrates can be instrumental in realizing the full potential of macroelectronics. Direct deposition or solid-phase crystallization techniques are often incompatible with polymers and produce materials with high defect densities Excimer-laser annealing is capable of producing films of reasonable quality directly on polymer and metallic substrates. Sequential lateral solidification (SLS) is an advanced pulsed-laser-crystallization technique capable of producing Si films on polymers with lower defect density than can be obtained via excimer-laser annealing. Circuits built directly on polymers using these SLS films show the highest performance reported to date.",
keywords = "Crystalline, Microelectronics, Polycrystal, Si",
author = "{Van Der Wilt}, {P. C.} and Kane, {M. G.} and Limanov, {A. B.} and Firester, {A. H.} and L. Goodman and J. Lee and Abelson, {J. R.} and Chitu, {A. M.} and Im, {James S.}",
year = "2006",
month = "6",
doi = "10.1557/mrs2006.119",
language = "English (US)",
volume = "31",
pages = "461--465",
journal = "MRS Bulletin",
issn = "0883-7694",
publisher = "Materials Research Society",
number = "6",

}

TY - JOUR

T1 - Low-temperature polycrystalline silicon thin-film transistors and circuits on flexible substrates

AU - Van Der Wilt, P. C.

AU - Kane, M. G.

AU - Limanov, A. B.

AU - Firester, A. H.

AU - Goodman, L.

AU - Lee, J.

AU - Abelson, J. R.

AU - Chitu, A. M.

AU - Im, James S.

PY - 2006/6

Y1 - 2006/6

N2 - Low-defect-density polycrystalline Si on flexible substrates can be instrumental in realizing the full potential of macroelectronics. Direct deposition or solid-phase crystallization techniques are often incompatible with polymers and produce materials with high defect densities Excimer-laser annealing is capable of producing films of reasonable quality directly on polymer and metallic substrates. Sequential lateral solidification (SLS) is an advanced pulsed-laser-crystallization technique capable of producing Si films on polymers with lower defect density than can be obtained via excimer-laser annealing. Circuits built directly on polymers using these SLS films show the highest performance reported to date.

AB - Low-defect-density polycrystalline Si on flexible substrates can be instrumental in realizing the full potential of macroelectronics. Direct deposition or solid-phase crystallization techniques are often incompatible with polymers and produce materials with high defect densities Excimer-laser annealing is capable of producing films of reasonable quality directly on polymer and metallic substrates. Sequential lateral solidification (SLS) is an advanced pulsed-laser-crystallization technique capable of producing Si films on polymers with lower defect density than can be obtained via excimer-laser annealing. Circuits built directly on polymers using these SLS films show the highest performance reported to date.

KW - Crystalline

KW - Microelectronics

KW - Polycrystal

KW - Si

UR - http://www.scopus.com/inward/record.url?scp=33745621681&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33745621681&partnerID=8YFLogxK

U2 - 10.1557/mrs2006.119

DO - 10.1557/mrs2006.119

M3 - Review article

AN - SCOPUS:33745621681

VL - 31

SP - 461

EP - 465

JO - MRS Bulletin

JF - MRS Bulletin

SN - 0883-7694

IS - 6

ER -