The growth of epitaxial GaAs at temperatures below 500°C by ultraviolet laser-assisted metalorganic chemical vapor deposition has been investigated. Experiments were conducted at 248 nm (KrF excimer laser) and 351 nm (XeF) in normal incidence with laser fluences maintained below 13 mJ/cm2. While the growth rate was enhanced by 5-15% at 450°C upon irradiating the substrate with 248 nm photons, no measurable effect was observed at 351 nm. This strong wavelength dependence at low fluence demonstrates that the film growth enhancement mechanism is photochemical in nature.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)