Low-temperature laser photochemical vapor deposition of GaAs

P. K. York, J. G. Eden, J. J. Coleman, G. E. Fernández, K. J. Beernink

Research output: Contribution to journalArticlepeer-review


The growth of epitaxial GaAs at temperatures below 500°C by ultraviolet laser-assisted metalorganic chemical vapor deposition has been investigated. Experiments were conducted at 248 nm (KrF excimer laser) and 351 nm (XeF) in normal incidence with laser fluences maintained below 13 mJ/cm2. While the growth rate was enhanced by 5-15% at 450°C upon irradiating the substrate with 248 nm photons, no measurable effect was observed at 351 nm. This strong wavelength dependence at low fluence demonstrates that the film growth enhancement mechanism is photochemical in nature.

Original languageEnglish (US)
Pages (from-to)1866-1868
Number of pages3
JournalApplied Physics Letters
Issue number19
StatePublished - 1989

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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