Low-temperature laser photochemical vapor deposition of GaAs

P. K. York; J. G. Eden; J. J. Coleman; G. E. Fernández; K. J. Beernink

doi:10.1063/1.101262

Low-temperature laser photochemical vapor deposition of GaAs

P. K. York, J. G. Eden, J. J. Coleman, G. E. Fernández, K. J. Beernink

Electrical and Computer Engineering

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Abstract

The growth of epitaxial GaAs at temperatures below 500°C by ultraviolet laser-assisted metalorganic chemical vapor deposition has been investigated. Experiments were conducted at 248 nm (KrF excimer laser) and 351 nm (XeF) in normal incidence with laser fluences maintained below 13 mJ/cm². While the growth rate was enhanced by 5-15% at 450°C upon irradiating the substrate with 248 nm photons, no measurable effect was observed at 351 nm. This strong wavelength dependence at low fluence demonstrates that the film growth enhancement mechanism is photochemical in nature.

Original language	English (US)
Pages (from-to)	1866-1868
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	19
DOIs	https://doi.org/10.1063/1.101262
State	Published - 1989

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Physics and Astronomy (miscellaneous)

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10.1063/1.101262

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title = "Low-temperature laser photochemical vapor deposition of GaAs",

abstract = "The growth of epitaxial GaAs at temperatures below 500°C by ultraviolet laser-assisted metalorganic chemical vapor deposition has been investigated. Experiments were conducted at 248 nm (KrF excimer laser) and 351 nm (XeF) in normal incidence with laser fluences maintained below 13 mJ/cm2. While the growth rate was enhanced by 5-15% at 450°C upon irradiating the substrate with 248 nm photons, no measurable effect was observed at 351 nm. This strong wavelength dependence at low fluence demonstrates that the film growth enhancement mechanism is photochemical in nature.",

author = "York, {P. K.} and Eden, {J. G.} and Coleman, {J. J.} and Fern{\'a}ndez, {G. E.} and Beernink, {K. J.}",

year = "1989",

doi = "10.1063/1.101262",

language = "English (US)",

volume = "54",

pages = "1866--1868",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Low-temperature laser photochemical vapor deposition of GaAs

AU - York, P. K.

AU - Eden, J. G.

AU - Coleman, J. J.

AU - Fernández, G. E.

AU - Beernink, K. J.

PY - 1989

Y1 - 1989

N2 - The growth of epitaxial GaAs at temperatures below 500°C by ultraviolet laser-assisted metalorganic chemical vapor deposition has been investigated. Experiments were conducted at 248 nm (KrF excimer laser) and 351 nm (XeF) in normal incidence with laser fluences maintained below 13 mJ/cm2. While the growth rate was enhanced by 5-15% at 450°C upon irradiating the substrate with 248 nm photons, no measurable effect was observed at 351 nm. This strong wavelength dependence at low fluence demonstrates that the film growth enhancement mechanism is photochemical in nature.

AB - The growth of epitaxial GaAs at temperatures below 500°C by ultraviolet laser-assisted metalorganic chemical vapor deposition has been investigated. Experiments were conducted at 248 nm (KrF excimer laser) and 351 nm (XeF) in normal incidence with laser fluences maintained below 13 mJ/cm2. While the growth rate was enhanced by 5-15% at 450°C upon irradiating the substrate with 248 nm photons, no measurable effect was observed at 351 nm. This strong wavelength dependence at low fluence demonstrates that the film growth enhancement mechanism is photochemical in nature.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Low-temperature laser photochemical vapor deposition of GaAs

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