Low-temperature ion beam mixing of Pt and Si markers in Ge

Sung Joon Kim, M. A. Nicolet, R. S. Averback, P. Baldo

Research output: Contribution to journalArticlepeer-review

Abstract

The mixing of Pt and Si marker atoms in Ge during 750-kev Xe irradiation was measured at temperatures between 6 and 500 K. The low-temperature measurements show that the mixing parameter for Pt is nearly twice that for Si. This result is in strong contradiction to the collisional theory of ion beam mixing. A weak temperature dependence in the mixing is found for both markers.

Original languageEnglish (US)
Pages (from-to)154-156
Number of pages3
JournalApplied Physics Letters
Volume46
Issue number2
DOIs
StatePublished - 1985
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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