Low-temperature growth of polycrystalline Si and Ge films by ultraviolet laser photodissociation of silane and germane

R. W. Andreatta, C. C. Abele, J. F. Osmundsen, James Gary Eden, D. Lubben, J. E. Greene

Research output: Contribution to journalArticle

Abstract

Polycrystalline Si and Ge films have been grown on amorphous SiO 2 substrates (average Tsubstrate <120°C) by the photodissociation of SiH4/N2 or GeH4/He mixtures, respectively, using pulsed ArF (193 nm) and KrF (248 nm) excimer lasers. For both Si and Ge, the film growth rate exhibited a strong dependence on laser wavelength and beam intensity I, where 1≲I≤20 MW cm -2. As-deposited films exhibited average grain sizes of up to 0.5 μm and the grains were equiaxed with a random orientation. Ge films doped with ∼1020 cm-3 Al were obtained by the simultaneous photodissociation of Al(CH3)3 and GeH4.

Original languageEnglish (US)
Pages (from-to)183-185
Number of pages3
JournalApplied Physics Letters
Volume40
Issue number2
DOIs
StatePublished - Dec 1 1982

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ultraviolet lasers
silanes
photodissociation
excimer lasers
grain size
wavelengths
lasers

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Low-temperature growth of polycrystalline Si and Ge films by ultraviolet laser photodissociation of silane and germane. / Andreatta, R. W.; Abele, C. C.; Osmundsen, J. F.; Eden, James Gary; Lubben, D.; Greene, J. E.

In: Applied Physics Letters, Vol. 40, No. 2, 01.12.1982, p. 183-185.

Research output: Contribution to journalArticle

Andreatta, R. W. ; Abele, C. C. ; Osmundsen, J. F. ; Eden, James Gary ; Lubben, D. ; Greene, J. E. / Low-temperature growth of polycrystalline Si and Ge films by ultraviolet laser photodissociation of silane and germane. In: Applied Physics Letters. 1982 ; Vol. 40, No. 2. pp. 183-185.
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