Low-temperature growth of polycrystalline Si and Ge films by ultraviolet laser photodissociation of silane and germane

R. W. Andreatta; C. C. Abele; J. F. Osmundsen; J. G. Eden; D. Lubben; J. E. Greene

doi:10.1063/1.93001

Low-temperature growth of polycrystalline Si and Ge films by ultraviolet laser photodissociation of silane and germane

R. W. Andreatta, C. C. Abele, J. F. Osmundsen, J. G. Eden, D. Lubben, J. E. Greene

Research output: Contribution to journal › Article › peer-review

Abstract

Polycrystalline Si and Ge films have been grown on amorphous SiO ₂ substrates (average T_substrate <120°C) by the photodissociation of SiH₄/N₂ or GeH₄/He mixtures, respectively, using pulsed ArF (193 nm) and KrF (248 nm) excimer lasers. For both Si and Ge, the film growth rate exhibited a strong dependence on laser wavelength and beam intensity I, where 1≲I≤20 MW cm ^-2. As-deposited films exhibited average grain sizes of up to 0.5 μm and the grains were equiaxed with a random orientation. Ge films doped with ∼10²⁰ cm^-3 Al were obtained by the simultaneous photodissociation of Al(CH₃)₃ and GeH₄.

Original language	English (US)
Pages (from-to)	183-185
Number of pages	3
Journal	Applied Physics Letters
Volume	40
Issue number	2
DOIs	https://doi.org/10.1063/1.93001
State	Published - 1982

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Physics and Astronomy (miscellaneous)

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10.1063/1.93001

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title = "Low-temperature growth of polycrystalline Si and Ge films by ultraviolet laser photodissociation of silane and germane",

abstract = "Polycrystalline Si and Ge films have been grown on amorphous SiO 2 substrates (average Tsubstrate <120°C) by the photodissociation of SiH4/N2 or GeH4/He mixtures, respectively, using pulsed ArF (193 nm) and KrF (248 nm) excimer lasers. For both Si and Ge, the film growth rate exhibited a strong dependence on laser wavelength and beam intensity I, where 1≲I≤20 MW cm -2. As-deposited films exhibited average grain sizes of up to 0.5 μm and the grains were equiaxed with a random orientation. Ge films doped with ∼1020 cm-3 Al were obtained by the simultaneous photodissociation of Al(CH3)3 and GeH4.",

author = "Andreatta, {R. W.} and Abele, {C. C.} and Osmundsen, {J. F.} and Eden, {J. G.} and D. Lubben and Greene, {J. E.}",

year = "1982",

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journal = "Applied Physics Letters",

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T1 - Low-temperature growth of polycrystalline Si and Ge films by ultraviolet laser photodissociation of silane and germane

AU - Andreatta, R. W.

AU - Abele, C. C.

AU - Osmundsen, J. F.

AU - Eden, J. G.

AU - Lubben, D.

AU - Greene, J. E.

PY - 1982

Y1 - 1982

N2 - Polycrystalline Si and Ge films have been grown on amorphous SiO 2 substrates (average Tsubstrate <120°C) by the photodissociation of SiH4/N2 or GeH4/He mixtures, respectively, using pulsed ArF (193 nm) and KrF (248 nm) excimer lasers. For both Si and Ge, the film growth rate exhibited a strong dependence on laser wavelength and beam intensity I, where 1≲I≤20 MW cm -2. As-deposited films exhibited average grain sizes of up to 0.5 μm and the grains were equiaxed with a random orientation. Ge films doped with ∼1020 cm-3 Al were obtained by the simultaneous photodissociation of Al(CH3)3 and GeH4.

AB - Polycrystalline Si and Ge films have been grown on amorphous SiO 2 substrates (average Tsubstrate <120°C) by the photodissociation of SiH4/N2 or GeH4/He mixtures, respectively, using pulsed ArF (193 nm) and KrF (248 nm) excimer lasers. For both Si and Ge, the film growth rate exhibited a strong dependence on laser wavelength and beam intensity I, where 1≲I≤20 MW cm -2. As-deposited films exhibited average grain sizes of up to 0.5 μm and the grains were equiaxed with a random orientation. Ge films doped with ∼1020 cm-3 Al were obtained by the simultaneous photodissociation of Al(CH3)3 and GeH4.

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Low-temperature growth of polycrystalline Si and Ge films by ultraviolet laser photodissociation of silane and germane

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