Abstract
We demonstrate the use of micrometer-scale polymer molding, a soft-lithographic patterning technique, as a means to fabricate amorphous silicon thin-film transistors (TFTs). Two different TFT architectures were fabricated and tested - a common gate, common channel architecture for single-level patterning on a spherically curved glass substrate - and an isolated channel, inverted, staggered architecture with multilevel pattern registration on a planar glass substrate. The silicon and silicon nitride films are deposited by reactive magnetron sputtering, allowing all film depositions to be carried out at temperatures at or below 125 °C, and making this fabrication process a candidate for use on plastic or other thermally sensitive substrates. We discuss the performance of polymer molding as a patterning technique for thin-film microstructures on both planar substrates and on substrates with three-dimensional curvature.
Original language | English (US) |
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Pages (from-to) | 3306-3315 |
Number of pages | 10 |
Journal | Chemistry of Materials |
Volume | 12 |
Issue number | 11 |
DOIs | |
State | Published - Dec 1 2000 |
ASJC Scopus subject areas
- Chemistry(all)
- Chemical Engineering(all)
- Materials Chemistry