Low-temperature fabrication of high-quality (Ba, Sr)TiO3 films using charged liquid cluster beam method

Hyungsoo Choi; Sungho Park; Yi Yang; Ho Chu Kang; Kyekyoon Kevin Kim; M. Y. Sung; Ho G. Jang

doi:10.1557/JMR.2002.0279

Low-temperature fabrication of high-quality (Ba, Sr)TiO₃ films using charged liquid cluster beam method

Hyungsoo Choi, Sungho Park, Yi Yang, Ho Chu Kang, Kyekyoon Kevin Kim, M. Y. Sung, Ho G. Jang

Research output: Contribution to journal › Article › peer-review

Abstract

Low-temperature deposition of high-quality (Ba,Sr)TiO₃ (BST) thin films was achieved in air on Pt/Ti/SiO₂/Si substrates using the charge liquid cluster beam (CLCB) method. The Ba, Sr, and Ti precursors were synthesized using alkoxy carboxylate ligands to tailor their physical properties to the CLCB process. The as-deposited BST films fabricated at substrate temperatures as low as 280°C exhibited high purity. The leakage current density and dielectric constant of the film, deposited at 300°C and subsequently annealed at 700°C, were 2.5 × 10^-9 A/cm² at 1.5 V and 305, respectively.

Original language	English (US)
Pages (from-to)	1888-1891
Number of pages	4
Journal	Journal of Materials Research
Volume	17
Issue number	8
DOIs	https://doi.org/10.1557/JMR.2002.0279
State	Published - Jan 1 2002

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Low-temperature fabrication of high-quality (Ba, Sr)TiO3 films using charged liquid cluster beam method",

abstract = "Low-temperature deposition of high-quality (Ba,Sr)TiO3 (BST) thin films was achieved in air on Pt/Ti/SiO2/Si substrates using the charge liquid cluster beam (CLCB) method. The Ba, Sr, and Ti precursors were synthesized using alkoxy carboxylate ligands to tailor their physical properties to the CLCB process. The as-deposited BST films fabricated at substrate temperatures as low as 280°C exhibited high purity. The leakage current density and dielectric constant of the film, deposited at 300°C and subsequently annealed at 700°C, were 2.5 × 10-9 A/cm2 at 1.5 V and 305, respectively.",

author = "Hyungsoo Choi and Sungho Park and Yi Yang and Kang, {Ho Chu} and Kim, {Kyekyoon Kevin} and Sung, {M. Y.} and Jang, {Ho G.}",

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T1 - Low-temperature fabrication of high-quality (Ba, Sr)TiO3 films using charged liquid cluster beam method

AU - Choi, Hyungsoo

AU - Park, Sungho

AU - Yang, Yi

AU - Kang, Ho Chu

AU - Kim, Kyekyoon Kevin

AU - Sung, M. Y.

AU - Jang, Ho G.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Low-temperature deposition of high-quality (Ba,Sr)TiO3 (BST) thin films was achieved in air on Pt/Ti/SiO2/Si substrates using the charge liquid cluster beam (CLCB) method. The Ba, Sr, and Ti precursors were synthesized using alkoxy carboxylate ligands to tailor their physical properties to the CLCB process. The as-deposited BST films fabricated at substrate temperatures as low as 280°C exhibited high purity. The leakage current density and dielectric constant of the film, deposited at 300°C and subsequently annealed at 700°C, were 2.5 × 10-9 A/cm2 at 1.5 V and 305, respectively.

AB - Low-temperature deposition of high-quality (Ba,Sr)TiO3 (BST) thin films was achieved in air on Pt/Ti/SiO2/Si substrates using the charge liquid cluster beam (CLCB) method. The Ba, Sr, and Ti precursors were synthesized using alkoxy carboxylate ligands to tailor their physical properties to the CLCB process. The as-deposited BST films fabricated at substrate temperatures as low as 280°C exhibited high purity. The leakage current density and dielectric constant of the film, deposited at 300°C and subsequently annealed at 700°C, were 2.5 × 10-9 A/cm2 at 1.5 V and 305, respectively.

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