TY - GEN
T1 - Low temperature CVD of Ru from C6H8Ru(CO)3
AU - Lazarz, Teresa S.
AU - Yang, Yu
AU - Kumar, Navneet
AU - Kim, Do Young
AU - Noh, Wontae
AU - Girolami, Gregory S.
AU - Abelson, John R.
PY - 2007
Y1 - 2007
N2 - Thin ruthenium films were deposited using chemical vapor deposition from the single-source precursor tricarbonyl(1,3-cyclohexadiene)Ru(0) onto silicon, silicon dioxide and c-plane sapphire substrates in the absence of a carrier gas by thermolysis. Growth rate, resistivity, purity, crystallinity and microstructure were determined. Tricarbonyl(1,3-cyclohexadiene)Ru(0) gave metallic ruthenium films with near bulk resistivities (11-21μΩ-cm), high growth rates (up to 20 nm/min), and nearly featureless microstructures. Nucleation was rapid on all substrates tested. These results suggest that tricarbonyl(1,3-cyclohexadiene)Ru(0) is an excellent, practical precursor to use for practical applications that require depositing thin ruthenium films.
AB - Thin ruthenium films were deposited using chemical vapor deposition from the single-source precursor tricarbonyl(1,3-cyclohexadiene)Ru(0) onto silicon, silicon dioxide and c-plane sapphire substrates in the absence of a carrier gas by thermolysis. Growth rate, resistivity, purity, crystallinity and microstructure were determined. Tricarbonyl(1,3-cyclohexadiene)Ru(0) gave metallic ruthenium films with near bulk resistivities (11-21μΩ-cm), high growth rates (up to 20 nm/min), and nearly featureless microstructures. Nucleation was rapid on all substrates tested. These results suggest that tricarbonyl(1,3-cyclohexadiene)Ru(0) is an excellent, practical precursor to use for practical applications that require depositing thin ruthenium films.
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U2 - 10.1557/proc-0990-b09-06
DO - 10.1557/proc-0990-b09-06
M3 - Conference contribution
AN - SCOPUS:41549167029
SN - 9781558999503
T3 - Materials Research Society Symposium Proceedings
SP - 103
EP - 108
BT - Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics
PB - Materials Research Society
T2 - 2007 MRS Spring Meeting
Y2 - 9 April 2007 through 13 April 2007
ER -