Low temperature CVD of Ru from C6H8Ru(CO)3

Teresa S. Lazarz, Yu Yang, Navneet Kumar, Do Young Kim, Wontae Noh, Gregory S. Girolami, John R. Abelson

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Thin ruthenium films were deposited using chemical vapor deposition from the single-source precursor tricarbonyl(1,3-cyclohexadiene)Ru(0) onto silicon, silicon dioxide and c-plane sapphire substrates in the absence of a carrier gas by thermolysis. Growth rate, resistivity, purity, crystallinity and microstructure were determined. Tricarbonyl(1,3-cyclohexadiene)Ru(0) gave metallic ruthenium films with near bulk resistivities (11-21μΩ-cm), high growth rates (up to 20 nm/min), and nearly featureless microstructures. Nucleation was rapid on all substrates tested. These results suggest that tricarbonyl(1,3-cyclohexadiene)Ru(0) is an excellent, practical precursor to use for practical applications that require depositing thin ruthenium films.

Original languageEnglish (US)
Title of host publicationMaterials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics
PublisherMaterials Research Society
Number of pages6
ISBN (Print)9781558999503
StatePublished - 2007
Event2007 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 9 2007Apr 13 2007

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2007 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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