Low-temperature CVD of η-Mn3N2-x from bis[di(tert-butyl)amido]manganese(II) and ammonia

Teresa S. Spicer, Charles W. Spicer, Andrew N. Cloud, Luke M. Davis, Gregory S. Girolami, John R. Abelson

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Manganese nitride films are grown by low-pressure chemical vapor deposition from the novel precursor bis[di(tert-butyl)amido]manganese(II) and ammonia. Mixed-phase films containing crystalline manganese nitride can be grown on substrates at temperatures as low as 80 °C. Above 200 °C, the films consist entirely of crystalline manganese nitride. The crystalline material has the same tetragonal unit cell as η-Mn3N2, but composition analysis of the Mn:N suggests that the material is best denoted as η-Mn3N2-x with x ∼ 0.7. Both oxygen and carbon contamination in the bulk of the films are 1 at. . Deposition rates of up to 10 nm/min are observed. The growth of crystalline films of a ceramic material at such low temperatures and high rates is highly unusual. The authors attribute this outcome to the presence of high-moment manganese atoms in mixed valence states and to vacancies in the nitrogen sublattice; both features lower the energies needed to break and reform metal-nitrogen bonds and thus allow the deposited atoms to settle more easily into a low-energy ordered arrangement.

Original languageEnglish (US)
Article number030604
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number3
StatePublished - May 2013

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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