Low temperature chemical vapor deposition of nanocrystalline V 2O5 thin films

Navaneetha Krishnan Nandakumar, Edmund G. Seebauer

Research output: Contribution to journalArticlepeer-review


Spatially uniform, carbon-free thin films of V2O5 were deposited on silicon by chemical vapor deposition using vanadium oxide triisopropoxide and water as gaseous precursors, in the temperature range of 100-300 °C. Films with substantial crystallinity were obtained for deposition temperatures as low as 180 °C. The "neat" chemistry that nominally leaves no fragments of ligand or water in the solid promotes film purity and reduces the deposition temperature needed for crystallization. Such deposition temperatures also open up additional possibilities for using crystalline vanadia on fragile substrates such as polymers for electronics and optical applications.

Original languageEnglish (US)
Pages (from-to)3663-3668
Number of pages6
JournalThin Solid Films
Issue number11
StatePublished - Mar 31 2011


  • Amorphous
  • Chemical vapor deposition
  • Nanocrystalline
  • Vanadia
  • Vanadium pentoxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


Dive into the research topics of 'Low temperature chemical vapor deposition of nanocrystalline V 2O5 thin films'. Together they form a unique fingerprint.

Cite this