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Low temperature absolute internal quantum efficiency of InGaN-based light-emitting diodes
Y. C. Chiu,
C. Bayram
Electrical and Computer Engineering
Micro and Nanotechnology Lab
Coordinated Science Lab
Biomedical and Translational Sciences
Research output
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peer-review
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Dive into the research topics of 'Low temperature absolute internal quantum efficiency of InGaN-based light-emitting diodes'. Together they form a unique fingerprint.
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Keyphrases
Low Temperature
100%
Light-emitting Diodes
100%
Internal Quantum Efficiency
100%
Indium Gallium Nitride (InGaN)
100%
Channel-based
33%
Recombination Model
33%
Atomic Force Microscopy
16%
Diffraction
16%
Raman Spectroscopy
16%
Sapphire
16%
Low Defect Density
16%
Si(111) Substrate
16%
Photoluminescence Properties
16%
Power Dependent Photoluminescence
16%
Temperature-dependent Photoluminescence
16%
Luminesce
16%
Blue LED
16%
High-low Temperature
16%
Negative Thermal Quenching
16%
Optical via
16%
Engineering
Low-Temperature
100%
Light-Emitting Diode
100%
Internal Quantum Efficiency
100%
Ray Diffraction
16%
Defects
16%
Atomic Force Microscopy
16%
Assuming
16%
Defect Density
16%
Material Science
Light-Emitting Diode
100%
Defect Density
25%
Photoluminescence
25%
Raman Spectroscopy
25%
Sapphire
25%