Low-resistance Ohmic contacts for high-power GaN field-effect transistors obtained by selective area growth using plasma-assisted molecular beam epitaxy

Seung Jae Hong, Kyekyoon Kim

Research output: Contribution to journalArticle

Abstract

Selective area growth (SAG) has been demonstrated using plasma-assisted molecular beam epitaxy (PAMBE) resulting in vastly improved Ohmic contacts for GaN-based high-power field-effect transistors (FETs). A heavily doped n-GaN layer was grown only in the Ohmic contact region and the resulting nonalloyed Ti/Al/Ti/Au metal contacts exhibited linear Ohmic behavior. Through rapid thermal annealing, very low specific contact resistivity (1.8 × 10 -8 Ω cm 2) was obtained at 850°C. Furthermore, contact resistances below 0.8 Ω mm were obtained by annealing at a wide range of temperatures (750-950°C). GaN metal-semiconductor FETs were fabricated to investigate the effect of the PAMBE-SAG on device performance, producing great improvement in the dc characteristics.

Original languageEnglish (US)
Article number042101
JournalApplied Physics Letters
Volume89
Issue number4
DOIs
StatePublished - Aug 4 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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