Low resistance ohmic contact to p-type GaN using Pd/Ir/Au multilayer scheme

J. W. Bae; T. Hossain; I. Adesida; K. H. Bogart; D. Koleske; A. A. Allerman; J. H. Jang

doi:10.1116/1.1924416

Low resistance ohmic contact to p-type GaN using Pd/Ir/Au multilayer scheme

J. W. Bae, T. Hossain, I. Adesida, K. H. Bogart, D. Koleske, A. A. Allerman, J. H. Jang

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Abstract

Ohmic contacts on p -type GaN utilizing PdIrAu metallization were fabricated and characterized. Metallized samples that were rapid thermally annealed at 400 °C for 1 min exhibited linear current-voltage characteristics. Specific ohmic contact resistivities as low as 2× 10-5 Ω cm2 were achieved. Auger electron spectroscopy and x-ray photoelectron spectroscopy depth profiles of annealed PdIrAu contact revealed the formation of Pd- and Ir-related alloys at the metal-semiconductor junction with the creation of Ga vacancies below the contact. The excellent contact resistance obtained is attributed to the formation of these Ga vacancies which resulted in the reduction of the depletion region width at the junction.

Original language	English (US)
Pages (from-to)	1072-1075
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Issue number	3
DOIs	https://doi.org/10.1116/1.1924416
State	Published - 2005

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1924416

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@article{792f95eec6f54668820023b65fbff0a4,

title = "Low resistance ohmic contact to p-type GaN using Pd/Ir/Au multilayer scheme",

abstract = "Ohmic contacts on p -type GaN utilizing PdIrAu metallization were fabricated and characterized. Metallized samples that were rapid thermally annealed at 400 °C for 1 min exhibited linear current-voltage characteristics. Specific ohmic contact resistivities as low as 2× 10-5 Ω cm2 were achieved. Auger electron spectroscopy and x-ray photoelectron spectroscopy depth profiles of annealed PdIrAu contact revealed the formation of Pd- and Ir-related alloys at the metal-semiconductor junction with the creation of Ga vacancies below the contact. The excellent contact resistance obtained is attributed to the formation of these Ga vacancies which resulted in the reduction of the depletion region width at the junction.",

author = "Bae, {J. W.} and T. Hossain and I. Adesida and Bogart, {K. H.} and D. Koleske and Allerman, {A. A.} and Jang, {J. H.}",

note = "Funding Information: This work was supported by DARPA Contract No. DAAD19-02-1-0419 by program managers Dr. J. Carrano and Dr. J. Zavada. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

year = "2005",

doi = "10.1116/1.1924416",

language = "English (US)",

volume = "23",

pages = "1072--1075",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "3",

}

TY - JOUR

T1 - Low resistance ohmic contact to p-type GaN using Pd/Ir/Au multilayer scheme

AU - Bae, J. W.

AU - Hossain, T.

AU - Adesida, I.

AU - Bogart, K. H.

AU - Koleske, D.

AU - Allerman, A. A.

AU - Jang, J. H.

N1 - Funding Information: This work was supported by DARPA Contract No. DAAD19-02-1-0419 by program managers Dr. J. Carrano and Dr. J. Zavada. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2005

Y1 - 2005

N2 - Ohmic contacts on p -type GaN utilizing PdIrAu metallization were fabricated and characterized. Metallized samples that were rapid thermally annealed at 400 °C for 1 min exhibited linear current-voltage characteristics. Specific ohmic contact resistivities as low as 2× 10-5 Ω cm2 were achieved. Auger electron spectroscopy and x-ray photoelectron spectroscopy depth profiles of annealed PdIrAu contact revealed the formation of Pd- and Ir-related alloys at the metal-semiconductor junction with the creation of Ga vacancies below the contact. The excellent contact resistance obtained is attributed to the formation of these Ga vacancies which resulted in the reduction of the depletion region width at the junction.

AB - Ohmic contacts on p -type GaN utilizing PdIrAu metallization were fabricated and characterized. Metallized samples that were rapid thermally annealed at 400 °C for 1 min exhibited linear current-voltage characteristics. Specific ohmic contact resistivities as low as 2× 10-5 Ω cm2 were achieved. Auger electron spectroscopy and x-ray photoelectron spectroscopy depth profiles of annealed PdIrAu contact revealed the formation of Pd- and Ir-related alloys at the metal-semiconductor junction with the creation of Ga vacancies below the contact. The excellent contact resistance obtained is attributed to the formation of these Ga vacancies which resulted in the reduction of the depletion region width at the junction.

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U2 - 10.1116/1.1924416

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VL - 23

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EP - 1075

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 3

ER -

Low resistance ohmic contact to p-type GaN using Pd/Ir/Au multilayer scheme

Abstract

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