Ohmic contacts on p -type GaN utilizing PdIrAu metallization were fabricated and characterized. Metallized samples that were rapid thermally annealed at 400 °C for 1 min exhibited linear current-voltage characteristics. Specific ohmic contact resistivities as low as 2× 10-5 Ω cm2 were achieved. Auger electron spectroscopy and x-ray photoelectron spectroscopy depth profiles of annealed PdIrAu contact revealed the formation of Pd- and Ir-related alloys at the metal-semiconductor junction with the creation of Ga vacancies below the contact. The excellent contact resistance obtained is attributed to the formation of these Ga vacancies which resulted in the reduction of the depletion region width at the junction.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - 2005|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering