Low resistance ohmic contact on p-type GaN grown by plasma-assisted molecular beam epitaxy

Myung C. Yoo, J. W. Lee, J. M. Myoung, K. H. Shim, K. Kim

Research output: Contribution to journalConference articlepeer-review


Ohmic contacts on p-type GaN have been investigated. High quality GaN epilayers on c-plane sapphire were prepared using plasma-assisted molecular beam epitaxy that utilized an inductively coupled rf nitrogen plasma source and solid source beams. The resulting film thickness and the doping concentration of the grown samples were in the range of 0.7-1.35 μm and 1018-1020/cm3 respectively. The metallization consisted of high work function metal bi-layers which included a combinations of 25 nm-thick Ni, Ti, Pt and/or Cr and 200 nm-thick Au on the highly p-doped GaN in a transmission line model pattern. Ohmic contacts were formed by alloying the bi-layers using rapid thermal annealing (RTA) at temperatures in the range of 300-700 °C for 1 min under nitrogen ambient. Current-voltage measurements showed that the specific contact resistance was as low as 1.2×10-4 Ω-cm2 for the sample having 1.4×1020/cm3 p-type doping concentration with a Cr/Au contact annealed at 500 °C for 1 min by RTA. Judging from the scanning Auger microscopy results and the glancing angle x-ray diffraction analysis, this resistance is attributed to Cr diffusion into the GaN layer.

Original languageEnglish (US)
Pages (from-to)131-136
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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