Low-resistance nonalloyed ohmic contacts on p-type GaAs using GaSb/GaAs strained-layer superlattices

J. I. Chyi; J. Chen; N. S. Kumar; C. Kiely; C. K. Peng; A. Rockett; H. Morkoç

doi:10.1063/1.101835

Low-resistance nonalloyed ohmic contacts on p-type GaAs using GaSb/GaAs strained-layer superlattices

J. I. Chyi, J. Chen, N. S. Kumar, C. Kiely, C. K. Peng, A. Rockett, H. Morkoç

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Employing a GaSb/GaAs strained-layer superlattice and a GaSb cap, specific contact resistivities as low as 3.2×10^-7 Ω cm² have been realized for nonalloyed ohmic contact to p-type GaAs. This contact structure is shown to give low contact resistances irrespective of the contact metals, including AuBe, AuGe/Ni/Au, and Au. Excellent thermal stability for AuBe contacts was obtained when sintered.

Original language	English (US)
Pages (from-to)	570-571
Number of pages	2
Journal	Applied Physics Letters
Volume	55
Issue number	6
DOIs	https://doi.org/10.1063/1.101835
State	Published - 1989

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Physics and Astronomy (miscellaneous)

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10.1063/1.101835

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abstract = "Employing a GaSb/GaAs strained-layer superlattice and a GaSb cap, specific contact resistivities as low as 3.2×10-7 Ω cm2 have been realized for nonalloyed ohmic contact to p-type GaAs. This contact structure is shown to give low contact resistances irrespective of the contact metals, including AuBe, AuGe/Ni/Au, and Au. Excellent thermal stability for AuBe contacts was obtained when sintered.",

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T1 - Low-resistance nonalloyed ohmic contacts on p-type GaAs using GaSb/GaAs strained-layer superlattices

AU - Chyi, J. I.

AU - Chen, J.

AU - Kumar, N. S.

AU - Kiely, C.

AU - Peng, C. K.

AU - Rockett, A.

AU - Morkoç, H.

PY - 1989

Y1 - 1989

N2 - Employing a GaSb/GaAs strained-layer superlattice and a GaSb cap, specific contact resistivities as low as 3.2×10-7 Ω cm2 have been realized for nonalloyed ohmic contact to p-type GaAs. This contact structure is shown to give low contact resistances irrespective of the contact metals, including AuBe, AuGe/Ni/Au, and Au. Excellent thermal stability for AuBe contacts was obtained when sintered.

AB - Employing a GaSb/GaAs strained-layer superlattice and a GaSb cap, specific contact resistivities as low as 3.2×10-7 Ω cm2 have been realized for nonalloyed ohmic contact to p-type GaAs. This contact structure is shown to give low contact resistances irrespective of the contact metals, including AuBe, AuGe/Ni/Au, and Au. Excellent thermal stability for AuBe contacts was obtained when sintered.

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JF - Applied Physics Letters

IS - 6

ER -

Low-resistance nonalloyed ohmic contacts on p-type GaAs using GaSb/GaAs strained-layer superlattices

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