Low-resistance nonalloyed ohmic contacts on p-type GaAs using GaSb/GaAs strained-layer superlattices

J. I. Chyi, J. Chen, N. S. Kumar, C. Kiely, C. K. Peng, A. Rockett, H. Morkoç

Research output: Contribution to journalArticlepeer-review

Abstract

Employing a GaSb/GaAs strained-layer superlattice and a GaSb cap, specific contact resistivities as low as 3.2×10-7 Ω cm2 have been realized for nonalloyed ohmic contact to p-type GaAs. This contact structure is shown to give low contact resistances irrespective of the contact metals, including AuBe, AuGe/Ni/Au, and Au. Excellent thermal stability for AuBe contacts was obtained when sintered.

Original languageEnglish (US)
Pages (from-to)570-571
Number of pages2
JournalApplied Physics Letters
Volume55
Issue number6
DOIs
StatePublished - 1989

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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