Abstract
Mo/Al/Mo/Au metallization scheme was investigated to develop low-resistance ohmic contacts on InAlN/AlN/GaN field-effect transistor heterostructure using a pre-metallization surface treatment with SiCl 4 plasma in a reactive ion etching system and a relatively low-temperature anneal at 650 °C. The contact resistance and specific contact resistivity were dramatically improved to as low as 0.15 ω mm and 7.8 × 10 -7 ω cm 2 at 650 °C, respectively.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1538-1540 |
| Number of pages | 3 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 208 |
| Issue number | 7 |
| DOIs | |
| State | Published - Jul 2011 |
| Externally published | Yes |
Keywords
- InAlN/GaN HEMTs
- Mo/Al/Mo/Au metallization
- SiCl pre-metallization treatment
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry