Low power operation of a vertical cavity transistor laser via the reduction of collector offset voltage

Mong Kai Wu, Michael Liu, Rohan Bambery, Milton Feng, Nick Holonyak

Research output: Contribution to journalArticlepeer-review

Abstract

Data are presented on low-power operation in a vertical cavity transistor laser via reduced collector offset voltage by placing the emitter contact on the top of four pairs of the GaAs/AlGaAs DBR to reduce emitter resistance and subsequently depositing 11 SiO2/TiO2 DBR pairs to improve cavity quality. Consequently, the device demonstrates a reduced collector offset voltage of 1.65 V and a low-power dissipation of 6.32 mW under laser operation.

Original languageEnglish (US)
Article number6777534
Pages (from-to)1003-1006
Number of pages4
JournalIEEE Photonics Technology Letters
Volume26
Issue number10
DOIs
StatePublished - May 15 2014

Keywords

  • Vertical cavity transistor laser
  • dielectric mirror
  • optical switch

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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