Low power operation of a vertical cavity transistor laser via the reduction of collector offset voltage

Mong Kai Wu; Michael Liu; Rohan Bambery; Milton Feng; Nick Holonyak

doi:10.1109/LPT.2014.2312360

Low power operation of a vertical cavity transistor laser via the reduction of collector offset voltage

Mong Kai Wu, Michael Liu, Rohan Bambery, Milton Feng, Nick Holonyak

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Data are presented on low-power operation in a vertical cavity transistor laser via reduced collector offset voltage by placing the emitter contact on the top of four pairs of the GaAs/AlGaAs DBR to reduce emitter resistance and subsequently depositing 11 SiO₂/TiO₂ DBR pairs to improve cavity quality. Consequently, the device demonstrates a reduced collector offset voltage of 1.65 V and a low-power dissipation of 6.32 mW under laser operation.

Original language	English (US)
Article number	6777534
Pages (from-to)	1003-1006
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	26
Issue number	10
DOIs	https://doi.org/10.1109/LPT.2014.2312360
State	Published - May 15 2014

Keywords

Vertical cavity transistor laser
dielectric mirror
optical switch

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Online availability

10.1109/LPT.2014.2312360

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AU - Holonyak, Nick

PY - 2014/5/15

Y1 - 2014/5/15

N2 - Data are presented on low-power operation in a vertical cavity transistor laser via reduced collector offset voltage by placing the emitter contact on the top of four pairs of the GaAs/AlGaAs DBR to reduce emitter resistance and subsequently depositing 11 SiO2/TiO2 DBR pairs to improve cavity quality. Consequently, the device demonstrates a reduced collector offset voltage of 1.65 V and a low-power dissipation of 6.32 mW under laser operation.

AB - Data are presented on low-power operation in a vertical cavity transistor laser via reduced collector offset voltage by placing the emitter contact on the top of four pairs of the GaAs/AlGaAs DBR to reduce emitter resistance and subsequently depositing 11 SiO2/TiO2 DBR pairs to improve cavity quality. Consequently, the device demonstrates a reduced collector offset voltage of 1.65 V and a low-power dissipation of 6.32 mW under laser operation.

KW - Vertical cavity transistor laser

KW - dielectric mirror

KW - optical switch

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Low power operation of a vertical cavity transistor laser via the reduction of collector offset voltage

Abstract

Keywords

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