Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA

Walid Hafez, Jie Wei Lai, Milton Feng

Research output: Contribution to journalLetter

Abstract

Scaling of submicron InP-InGaAs HBTs is investigated for low-power high-speed applications in mixed signal circuits. Device performance for transistors fabricated with a 0.5-μm emitter width and varying emitter lengths are studied. The 0.5 μm × 2 μm devices yielded excellent low-current RF performance, with an fT = 173 GHz and an fMAX = 187 GHz at 1 mA, the highest values reported for InP-based devices to date.

Original languageEnglish (US)
Pages (from-to)427-429
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number7
DOIs
StatePublished - Jul 1 2003

Keywords

  • Heterojunction bipolar transistors (HBTs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA'. Together they form a unique fingerprint.

  • Cite this