Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA

Walid Hafez; Jie Wei Lai; Milton Feng

doi:10.1109/LED.2003.814008

Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA

Walid Hafez, Jie Wei Lai, Milton Feng

Electrical and Computer Engineering

Research output: Contribution to journal › Letter › peer-review

Abstract

Scaling of submicron InP-InGaAs HBTs is investigated for low-power high-speed applications in mixed signal circuits. Device performance for transistors fabricated with a 0.5-μm emitter width and varying emitter lengths are studied. The 0.5 μm × 2 μm devices yielded excellent low-current RF performance, with an f_T = 173 GHz and an f_MAX = 187 GHz at 1 mA, the highest values reported for InP-based devices to date.

Original language	English (US)
Pages (from-to)	427-429
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	24
Issue number	7
DOIs	https://doi.org/10.1109/LED.2003.814008
State	Published - Jul 2003

Keywords

Heterojunction bipolar transistors (HBTs)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/LED.2003.814008

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abstract = "Scaling of submicron InP-InGaAs HBTs is investigated for low-power high-speed applications in mixed signal circuits. Device performance for transistors fabricated with a 0.5-μm emitter width and varying emitter lengths are studied. The 0.5 μm × 2 μm devices yielded excellent low-current RF performance, with an fT = 173 GHz and an fMAX = 187 GHz at 1 mA, the highest values reported for InP-based devices to date.",

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author = "Walid Hafez and Lai, {Jie Wei} and Milton Feng",

year = "2003",

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pages = "427--429",

journal = "IEEE Electron Device Letters",

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AU - Hafez, Walid

AU - Lai, Jie Wei

AU - Feng, Milton

PY - 2003/7

Y1 - 2003/7

N2 - Scaling of submicron InP-InGaAs HBTs is investigated for low-power high-speed applications in mixed signal circuits. Device performance for transistors fabricated with a 0.5-μm emitter width and varying emitter lengths are studied. The 0.5 μm × 2 μm devices yielded excellent low-current RF performance, with an fT = 173 GHz and an fMAX = 187 GHz at 1 mA, the highest values reported for InP-based devices to date.

AB - Scaling of submicron InP-InGaAs HBTs is investigated for low-power high-speed applications in mixed signal circuits. Device performance for transistors fabricated with a 0.5-μm emitter width and varying emitter lengths are studied. The 0.5 μm × 2 μm devices yielded excellent low-current RF performance, with an fT = 173 GHz and an fMAX = 187 GHz at 1 mA, the highest values reported for InP-based devices to date.

KW - Heterojunction bipolar transistors (HBTs)

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DO - 10.1109/LED.2003.814008

M3 - Letter

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EP - 429

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

ER -

Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA

Abstract

Keywords

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