Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA

Walid Hafez, Jie Wei Lai, Milton Feng

Research output: Contribution to journalLetter

Abstract

Scaling of submicron InP-InGaAs HBTs is investigated for low-power high-speed applications in mixed signal circuits. Device performance for transistors fabricated with a 0.5-μm emitter width and varying emitter lengths are studied. The 0.5 μm × 2 μm devices yielded excellent low-current RF performance, with an fT = 173 GHz and an fMAX = 187 GHz at 1 mA, the highest values reported for InP-based devices to date.

Original languageEnglish (US)
Pages (from-to)427-429
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number7
DOIs
StatePublished - Jul 1 2003

Fingerprint

Heterojunction bipolar transistors
Transistors
Networks (circuits)

Keywords

  • Heterojunction bipolar transistors (HBTs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA. / Hafez, Walid; Lai, Jie Wei; Feng, Milton.

In: IEEE Electron Device Letters, Vol. 24, No. 7, 01.07.2003, p. 427-429.

Research output: Contribution to journalLetter

Hafez, Walid ; Lai, Jie Wei ; Feng, Milton. / Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA. In: IEEE Electron Device Letters. 2003 ; Vol. 24, No. 7. pp. 427-429.
@article{b65766f9d19044319ac0c4270c8c90bb,
title = "Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA",
abstract = "Scaling of submicron InP-InGaAs HBTs is investigated for low-power high-speed applications in mixed signal circuits. Device performance for transistors fabricated with a 0.5-μm emitter width and varying emitter lengths are studied. The 0.5 μm × 2 μm devices yielded excellent low-current RF performance, with an fT = 173 GHz and an fMAX = 187 GHz at 1 mA, the highest values reported for InP-based devices to date.",
keywords = "Heterojunction bipolar transistors (HBTs)",
author = "Walid Hafez and Lai, {Jie Wei} and Milton Feng",
year = "2003",
month = "7",
day = "1",
doi = "10.1109/LED.2003.814008",
language = "English (US)",
volume = "24",
pages = "427--429",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",

}

TY - JOUR

T1 - Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA

AU - Hafez, Walid

AU - Lai, Jie Wei

AU - Feng, Milton

PY - 2003/7/1

Y1 - 2003/7/1

N2 - Scaling of submicron InP-InGaAs HBTs is investigated for low-power high-speed applications in mixed signal circuits. Device performance for transistors fabricated with a 0.5-μm emitter width and varying emitter lengths are studied. The 0.5 μm × 2 μm devices yielded excellent low-current RF performance, with an fT = 173 GHz and an fMAX = 187 GHz at 1 mA, the highest values reported for InP-based devices to date.

AB - Scaling of submicron InP-InGaAs HBTs is investigated for low-power high-speed applications in mixed signal circuits. Device performance for transistors fabricated with a 0.5-μm emitter width and varying emitter lengths are studied. The 0.5 μm × 2 μm devices yielded excellent low-current RF performance, with an fT = 173 GHz and an fMAX = 187 GHz at 1 mA, the highest values reported for InP-based devices to date.

KW - Heterojunction bipolar transistors (HBTs)

UR - http://www.scopus.com/inward/record.url?scp=0042388036&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042388036&partnerID=8YFLogxK

U2 - 10.1109/LED.2003.814008

DO - 10.1109/LED.2003.814008

M3 - Letter

AN - SCOPUS:0042388036

VL - 24

SP - 427

EP - 429

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 7

ER -