Scaling of submicron InP-InGaAs HBTs is investigated for low-power high-speed applications in mixed signal circuits. Device performance for transistors fabricated with a 0.5-μm emitter width and varying emitter lengths are studied. The 0.5 μm × 2 μm devices yielded excellent low-current RF performance, with an fT = 173 GHz and an fMAX = 187 GHz at 1 mA, the highest values reported for InP-based devices to date.
- Heterojunction bipolar transistors (HBTs)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering