Abstract
We present the design of two wide-band, low-power and low-noise amplifiers (LNAs) using SiGe BiCMOS technology. The distributed LNA demonstrated 0.1-23-GHz bandwidth and 14.5-dB gain with less than ±1-dB gain flatness. It exhibited 5-dB noise figure and 14.8-dBm output IP3, and dissipated 54-mW dc power. Comparable circuit performance was also obtained in the lumped LNA while utilizing only one-fifth the chip area of the distributed LNA.
Original language | English (US) |
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Pages (from-to) | 956-959 |
Number of pages | 4 |
Journal | IEEE Journal of Solid-State Circuits |
Volume | 39 |
Issue number | 6 |
DOIs | |
State | Published - Jun 2004 |
Keywords
- BiCMOS
- Broadband amplifiers
- Distributed amplifiers
- Linearity
- Low-noise amplifiers (LNAs)
- Noise figure
- SiGe
ASJC Scopus subject areas
- Electrical and Electronic Engineering