Low-power, high-gain, and high-linearity SiGe BiCMOS wide-band low-noise amplifier

Qiurong He, Milton Feng

Research output: Contribution to journalArticle

Abstract

We present the design of two wide-band, low-power and low-noise amplifiers (LNAs) using SiGe BiCMOS technology. The distributed LNA demonstrated 0.1-23-GHz bandwidth and 14.5-dB gain with less than ±1-dB gain flatness. It exhibited 5-dB noise figure and 14.8-dBm output IP3, and dissipated 54-mW dc power. Comparable circuit performance was also obtained in the lumped LNA while utilizing only one-fifth the chip area of the distributed LNA.

Original languageEnglish (US)
Pages (from-to)956-959
Number of pages4
JournalIEEE Journal of Solid-State Circuits
Volume39
Issue number6
DOIs
StatePublished - Jun 1 2004

Keywords

  • BiCMOS
  • Broadband amplifiers
  • Distributed amplifiers
  • Linearity
  • Low-noise amplifiers (LNAs)
  • Noise figure
  • SiGe

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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