Low-power, high-gain, and high-linearity SiGe BiCMOS wide-band low-noise amplifier

Qiurong He; Milton Feng

doi:10.1109/JSSC.2004.827801

Low-power, high-gain, and high-linearity SiGe BiCMOS wide-band low-noise amplifier

Qiurong He, Milton Feng

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We present the design of two wide-band, low-power and low-noise amplifiers (LNAs) using SiGe BiCMOS technology. The distributed LNA demonstrated 0.1-23-GHz bandwidth and 14.5-dB gain with less than ±1-dB gain flatness. It exhibited 5-dB noise figure and 14.8-dBm output IP3, and dissipated 54-mW dc power. Comparable circuit performance was also obtained in the lumped LNA while utilizing only one-fifth the chip area of the distributed LNA.

Original language	English (US)
Pages (from-to)	956-959
Number of pages	4
Journal	IEEE Journal of Solid-State Circuits
Volume	39
Issue number	6
DOIs	https://doi.org/10.1109/JSSC.2004.827801
State	Published - Jun 2004

Keywords

BiCMOS
Broadband amplifiers
Distributed amplifiers
Linearity
Low-noise amplifiers (LNAs)
Noise figure
SiGe

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1109/JSSC.2004.827801

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title = "Low-power, high-gain, and high-linearity SiGe BiCMOS wide-band low-noise amplifier",

abstract = "We present the design of two wide-band, low-power and low-noise amplifiers (LNAs) using SiGe BiCMOS technology. The distributed LNA demonstrated 0.1-23-GHz bandwidth and 14.5-dB gain with less than ±1-dB gain flatness. It exhibited 5-dB noise figure and 14.8-dBm output IP3, and dissipated 54-mW dc power. Comparable circuit performance was also obtained in the lumped LNA while utilizing only one-fifth the chip area of the distributed LNA.",

keywords = "BiCMOS, Broadband amplifiers, Distributed amplifiers, Linearity, Low-noise amplifiers (LNAs), Noise figure, SiGe",

author = "Qiurong He and Milton Feng",

note = "Funding Information: Manuscript received November 18, 2003; revised February 17, 2004. This work was supported by the Defense Advanced Research Projects Agency under the TEAM program. The authors are with the Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 USA (e-mail: [email protected]). Digital Object Identifier 10.1109/JSSC.2004.827801 Fig. 1. Measured I–V curves with I NPN transistor with emitter size of 0.2",

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doi = "10.1109/JSSC.2004.827801",

language = "English (US)",

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pages = "956--959",

journal = "IEEE Journal of Solid-State Circuits",

issn = "0018-9200",

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T1 - Low-power, high-gain, and high-linearity SiGe BiCMOS wide-band low-noise amplifier

AU - He, Qiurong

AU - Feng, Milton

N1 - Funding Information: Manuscript received November 18, 2003; revised February 17, 2004. This work was supported by the Defense Advanced Research Projects Agency under the TEAM program. The authors are with the Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 USA (e-mail: [email protected]). Digital Object Identifier 10.1109/JSSC.2004.827801 Fig. 1. Measured I–V curves with I NPN transistor with emitter size of 0.2

PY - 2004/6

Y1 - 2004/6

N2 - We present the design of two wide-band, low-power and low-noise amplifiers (LNAs) using SiGe BiCMOS technology. The distributed LNA demonstrated 0.1-23-GHz bandwidth and 14.5-dB gain with less than ±1-dB gain flatness. It exhibited 5-dB noise figure and 14.8-dBm output IP3, and dissipated 54-mW dc power. Comparable circuit performance was also obtained in the lumped LNA while utilizing only one-fifth the chip area of the distributed LNA.

AB - We present the design of two wide-band, low-power and low-noise amplifiers (LNAs) using SiGe BiCMOS technology. The distributed LNA demonstrated 0.1-23-GHz bandwidth and 14.5-dB gain with less than ±1-dB gain flatness. It exhibited 5-dB noise figure and 14.8-dBm output IP3, and dissipated 54-mW dc power. Comparable circuit performance was also obtained in the lumped LNA while utilizing only one-fifth the chip area of the distributed LNA.

KW - BiCMOS

KW - Broadband amplifiers

KW - Distributed amplifiers

KW - Linearity

KW - Low-noise amplifiers (LNAs)

KW - Noise figure

KW - SiGe

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JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

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Low-power, high-gain, and high-linearity SiGe BiCMOS wide-band low-noise amplifier

Abstract

Keywords

ASJC Scopus subject areas

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