Low Phase Noise RF Oscillators Based on Thin-Film Lithium Niobate Acoustic Delay Lines

Ming Huang Li, Ruochen Lu, Tomas Manzaneque, Songbin Gong

Research output: Contribution to journalArticle

Abstract

An RF oscillator has been demonstrated using a wideband SH0 mode lithium niobate acoustic delay line (ADL). The design space of the ADL-based oscillators is theoretically investigated using the classical linear time-invariant (LTI) phase noise model. The analysis reveals that the key to low phase noise is low insertion loss (IL), large delay (τG), and high carrier frequency ( fo). Two SH0 ADL oscillators based on a single SH0 ADL ( fo = 157 MHz, IL = 3.2 dB, τG = 270ns) but with different loop amplifiers have been measured, showing low phase noise of -114 dBc/Hz and -127 dBc/Hz at 10-kHz offset with a carrier power level of -8 dBm and 0.5 dBm, respectively. These oscillators not only have surpassed other Lamb wave delay oscillators but also compete favorably with surface acoustic wave (SAW) delay line oscillators in performance. [2019-0223].

Original languageEnglish (US)
Article number8954660
Pages (from-to)129-131
Number of pages3
JournalJournal of Microelectromechanical Systems
Volume29
Issue number2
DOIs
StatePublished - Apr 2020

Keywords

  • acoustic delay lines
  • lithium niobate
  • Microelectromechanical systems
  • oscillator
  • phase noise
  • piezoelectric transducers

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering

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