TY - JOUR
T1 - Low Phase Noise RF Oscillators Based on Thin-Film Lithium Niobate Acoustic Delay Lines
AU - Li, Ming Huang
AU - Lu, Ruochen
AU - Manzaneque, Tomas
AU - Gong, Songbin
N1 - Manuscript received October 3, 2019; revised December 5, 2019; accepted December 19, 2019. Date of publication January 9, 2020; date of current version April 2, 2020. This work was supported in part by the DARPA NZero Program, in part by the NSF SpecEES Program under Grant 1824320, and in part by the Ministry of Science and Technology (MOST) of Taiwan under Grant MOST 108-2636-E-007-014 (Young Scholar Fellowship Program). Subject Editor C. Nguyen. (Corresponding author: Ming-Huang Li.) Ming-Huang Li is with the Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (e-mail: [email protected]).
This work was supported in part by the DARPA NZero Program, in part by the NSF SpecEES Program under Grant 1824320, and in part by the Ministry of Science and Technology (MOST) of Taiwan under Grant MOST 108-2636-E-007-014 (Young Scholar Fellowship Program).
PY - 2020/4
Y1 - 2020/4
N2 - An RF oscillator has been demonstrated using a wideband SH0 mode lithium niobate acoustic delay line (ADL). The design space of the ADL-based oscillators is theoretically investigated using the classical linear time-invariant (LTI) phase noise model. The analysis reveals that the key to low phase noise is low insertion loss (IL), large delay (τG), and high carrier frequency ( fo). Two SH0 ADL oscillators based on a single SH0 ADL ( fo = 157 MHz, IL = 3.2 dB, τG = 270ns) but with different loop amplifiers have been measured, showing low phase noise of -114 dBc/Hz and -127 dBc/Hz at 10-kHz offset with a carrier power level of -8 dBm and 0.5 dBm, respectively. These oscillators not only have surpassed other Lamb wave delay oscillators but also compete favorably with surface acoustic wave (SAW) delay line oscillators in performance. [2019-0223].
AB - An RF oscillator has been demonstrated using a wideband SH0 mode lithium niobate acoustic delay line (ADL). The design space of the ADL-based oscillators is theoretically investigated using the classical linear time-invariant (LTI) phase noise model. The analysis reveals that the key to low phase noise is low insertion loss (IL), large delay (τG), and high carrier frequency ( fo). Two SH0 ADL oscillators based on a single SH0 ADL ( fo = 157 MHz, IL = 3.2 dB, τG = 270ns) but with different loop amplifiers have been measured, showing low phase noise of -114 dBc/Hz and -127 dBc/Hz at 10-kHz offset with a carrier power level of -8 dBm and 0.5 dBm, respectively. These oscillators not only have surpassed other Lamb wave delay oscillators but also compete favorably with surface acoustic wave (SAW) delay line oscillators in performance. [2019-0223].
KW - Microelectromechanical systems
KW - acoustic delay lines
KW - lithium niobate
KW - oscillator
KW - phase noise
KW - piezoelectric transducers
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U2 - 10.1109/JMEMS.2019.2961976
DO - 10.1109/JMEMS.2019.2961976
M3 - Article
AN - SCOPUS:85082987692
SN - 1057-7157
VL - 29
SP - 129
EP - 131
JO - Journal of Microelectromechanical Systems
JF - Journal of Microelectromechanical Systems
IS - 2
M1 - 8954660
ER -