Low phase noise Ka-band VCOs using InGaP/GaAs HBTs and coplanar waveguide

M. S. Heins; D. W. Barlage; M. T. Fresina; D. A. Ahmari; Q. J. Hartmann; G. E. Stillman; M. Feng

Low phase noise Ka-band VCOs using InGaP/GaAs HBTs and coplanar waveguide

M. S. Heins, D. W. Barlage, M. T. Fresina, D. A. Ahmari, Q. J. Hartmann, G. E. Stillman, M. Feng

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Ka-band voltage controlled oscillators (VCOs) have been designed using InGaP/GaAs HBT technology. The best measured VCO shows a phase noise of -95 dBc/Hz at 100 kHz offset and -112 dBc/Hz at 1 MHz offset, delivering 5.3 dBm output power at 40.8 GHz. Variations of circuit topology and resonator type were fabricated to evaluate their contribution to phase noise and tuning range.

Original language	English (US)
Pages (from-to)	255-258
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	1
State	Published - 1997
Event	Proceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Denver, CO, USA Duration: Jun 8 1997 → Jun 13 1997

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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@article{b54b6757c33d46f9848535eef747466a,

title = "Low phase noise Ka-band VCOs using InGaP/GaAs HBTs and coplanar waveguide",

abstract = "Ka-band voltage controlled oscillators (VCOs) have been designed using InGaP/GaAs HBT technology. The best measured VCO shows a phase noise of -95 dBc/Hz at 100 kHz offset and -112 dBc/Hz at 1 MHz offset, delivering 5.3 dBm output power at 40.8 GHz. Variations of circuit topology and resonator type were fabricated to evaluate their contribution to phase noise and tuning range.",

author = "Heins, {M. S.} and Barlage, {D. W.} and Fresina, {M. T.} and Ahmari, {D. A.} and Hartmann, {Q. J.} and Stillman, {G. E.} and M. Feng",

year = "1997",

language = "English (US)",

volume = "1",

pages = "255--258",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) ; Conference date: 08-06-1997 Through 13-06-1997",

}

TY - JOUR

T1 - Low phase noise Ka-band VCOs using InGaP/GaAs HBTs and coplanar waveguide

AU - Heins, M. S.

AU - Barlage, D. W.

AU - Fresina, M. T.

AU - Ahmari, D. A.

AU - Hartmann, Q. J.

AU - Stillman, G. E.

AU - Feng, M.

PY - 1997

Y1 - 1997

N2 - Ka-band voltage controlled oscillators (VCOs) have been designed using InGaP/GaAs HBT technology. The best measured VCO shows a phase noise of -95 dBc/Hz at 100 kHz offset and -112 dBc/Hz at 1 MHz offset, delivering 5.3 dBm output power at 40.8 GHz. Variations of circuit topology and resonator type were fabricated to evaluate their contribution to phase noise and tuning range.

AB - Ka-band voltage controlled oscillators (VCOs) have been designed using InGaP/GaAs HBT technology. The best measured VCO shows a phase noise of -95 dBc/Hz at 100 kHz offset and -112 dBc/Hz at 1 MHz offset, delivering 5.3 dBm output power at 40.8 GHz. Variations of circuit topology and resonator type were fabricated to evaluate their contribution to phase noise and tuning range.

UR - http://www.scopus.com/inward/record.url?scp=0030647117&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030647117&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030647117

SN - 0149-645X

VL - 1

SP - 255

EP - 258

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - Proceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3)

Y2 - 8 June 1997 through 13 June 1997

ER -

Low phase noise Ka-band VCOs using InGaP/GaAs HBTs and coplanar waveguide

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