Low-noise GaAs field-effect transistor made by molecular beam epitaxy

M. Feng, V. K. Eu, I. J. D'Haenens, M. Braunstein

Research output: Contribution to journalArticlepeer-review


Low-noise GaAs metal-semiconductor field-effect transistors (MESFET's) have been made using molecular beam epitaxy. A noise figure of 1.47 dB with 9.9-dB associated gain has been achieved at 12 GHz, with a 0.6-μm gate length by 300-μm gate width FET device. These are the best results yet reported for low-noise molecular beam epitaxial (MBE) GaAs FET's, and comparable to the best performance devices made with vapor phase epitaxy and ion implantation. Equivalent circuit elements have been evaluated in an effort to understand the critical parameters necessary to achieve these results.

Original languageEnglish (US)
Pages (from-to)633-635
Number of pages3
JournalApplied Physics Letters
Issue number7
StatePublished - 1982
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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