@inproceedings{7b585df0f9834a24b982826cbfb5f9d3,
title = "Low noise device and amplifier characterization for deep space communication applications",
abstract = "The significant advances in the development of high electron mobility field-effect transistors (HEMTs) has resulted in cryogenic low-noise amplifiers (LNAs) which rival masers at S- and X-band. Further advances in the characterization and device technology at cryogenic temperatures may eventually supplant maser amplifiers at Ka- band. A systematic cryogenic on-wafer study of advanced FET technology is performed and an empirical model for the cryogenic operation of ion-implanted MESFET technology is presented. Multi-stage HEMT based LNAs have been fabricated and characterized for operation at Ka- band.",
author = "J. Laskar and Bautista, {J. J.} and B. Fujiwara and D. Scherrer and M. Feng",
year = "1993",
language = "English (US)",
isbn = "0780312090",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Publ by IEEE",
pages = "1095--1098",
booktitle = "Digest IEEE MTT-S International Symposium Digest",
note = "Proceedings of the 1993 IEEE MTT-S International Symposium on Circuits and Systems, Part 4 (of 4) ; Conference date: 14-06-1993 Through 18-06-1993",
}