Low noise, and high gain wideband amplifier using SiGe HBT technology

Richard Chan, Milton Feng

Research output: Contribution to journalConference article

Abstract

A low noise wideband amplifier using SiGe HBT technology for the receiver System-on-a-Chip application is reported. The fabricated amplifier chip has a gain of 15 dB across 22 GHz bandwidth, noise figure of S dB, and output third-order Intermodulation product (OIP3) of 16.5 dBm, while dissipating a dc power of 72 mW for the operation. Measured high frequency, noise and linearity performances are compared with Cadence's Spectre's simulation with layout parasitics. Excellent agreement is observed for ultra-low power amplifier's measured and simulated results.

Original languageEnglish (US)
Pages (from-to)21-24
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume1
StatePublished - Sep 20 2004
Event2004 IEEE MITT-S International Microwave Symposium Digest - Fort Worth, TX, United States
Duration: Jun 6 2004Jun 11 2004

Keywords

  • And low power amplifier
  • Distributed amplifier
  • Low noise amplifier
  • Wideband amplifier

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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