Abstract
A low noise wideband amplifier using SiGe HBT technology for the receiver System-on-a-Chip application is reported. The fabricated amplifier chip has a gain of 15 dB across 22 GHz bandwidth, noise figure of S dB, and output third-order Intermodulation product (OIP3) of 16.5 dBm, while dissipating a dc power of 72 mW for the operation. Measured high frequency, noise and linearity performances are compared with Cadence's Spectre's simulation with layout parasitics. Excellent agreement is observed for ultra-low power amplifier's measured and simulated results.
Original language | English (US) |
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Pages (from-to) | 21-24 |
Number of pages | 4 |
Journal | IEEE MTT-S International Microwave Symposium Digest |
Volume | 1 |
State | Published - 2004 |
Event | 2004 IEEE MITT-S International Microwave Symposium Digest - Fort Worth, TX, United States Duration: Jun 6 2004 → Jun 11 2004 |
Keywords
- And low power amplifier
- Distributed amplifier
- Low noise amplifier
- Wideband amplifier
ASJC Scopus subject areas
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering