Low frequency resistance and critical current fluctuations in Al-based Josephson junctions

C. D. Nugroho, V. Orlyanchik, D. J. Van Harlingen

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Abstract

We present low-temperature measurements of the low-frequency 1/f noise arising from an ensemble of two-level fluctuators in the oxide barrier of Al/AlOx/Al Josephson junctions. The fractional noise power spectrum of the critical-current and normal-state resistance has similar magnitudes and scale linearly with temperature, implying an equivalence between the two. Compiling our results and published data, we deduce the area and temperature scaling of the noise for AlOx barrier junctions. We find that the density of two-level fluctuators in the junction barrier is similar to the typical value in glassy systems. We discuss the implications and consistency with recent qubit experiments.

Original languageEnglish (US)
Article number142602
JournalApplied Physics Letters
Volume102
Issue number14
DOIs
StatePublished - Apr 8 2013

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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