Low frequency resistance and critical current fluctuations in Al-based Josephson junctions

C. D. Nugroho; V. Orlyanchik; D. J. Van Harlingen

doi:10.1063/1.4801521

Low frequency resistance and critical current fluctuations in Al-based Josephson junctions

C. D. Nugroho, V. Orlyanchik, D. J. Van Harlingen

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We present low-temperature measurements of the low-frequency 1/f noise arising from an ensemble of two-level fluctuators in the oxide barrier of Al/AlO_x/Al Josephson junctions. The fractional noise power spectrum of the critical-current and normal-state resistance has similar magnitudes and scale linearly with temperature, implying an equivalence between the two. Compiling our results and published data, we deduce the area and temperature scaling of the noise for AlO_x barrier junctions. We find that the density of two-level fluctuators in the junction barrier is similar to the typical value in glassy systems. We discuss the implications and consistency with recent qubit experiments.

Original language	English (US)
Article number	142602
Journal	Applied Physics Letters
Volume	102
Issue number	14
DOIs	https://doi.org/10.1063/1.4801521
State	Published - Apr 8 2013

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Physics and Astronomy (miscellaneous)

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10.1063/1.4801521

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abstract = "We present low-temperature measurements of the low-frequency 1/f noise arising from an ensemble of two-level fluctuators in the oxide barrier of Al/AlOx/Al Josephson junctions. The fractional noise power spectrum of the critical-current and normal-state resistance has similar magnitudes and scale linearly with temperature, implying an equivalence between the two. Compiling our results and published data, we deduce the area and temperature scaling of the noise for AlOx barrier junctions. We find that the density of two-level fluctuators in the junction barrier is similar to the typical value in glassy systems. We discuss the implications and consistency with recent qubit experiments.",

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note = "Funding Information: This research was funded by the Office of the Director of National Intelligence (ODNI), Intelligence Advanced Research Projects Activity (IARPA), through the Army Research Office. All statements of fact, opinion, or conclusions contained herein are those of the authors and should not be construed as representing the official views or policies of IARPA, the ODNI, or the U.S. Government.",

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N2 - We present low-temperature measurements of the low-frequency 1/f noise arising from an ensemble of two-level fluctuators in the oxide barrier of Al/AlOx/Al Josephson junctions. The fractional noise power spectrum of the critical-current and normal-state resistance has similar magnitudes and scale linearly with temperature, implying an equivalence between the two. Compiling our results and published data, we deduce the area and temperature scaling of the noise for AlOx barrier junctions. We find that the density of two-level fluctuators in the junction barrier is similar to the typical value in glassy systems. We discuss the implications and consistency with recent qubit experiments.

AB - We present low-temperature measurements of the low-frequency 1/f noise arising from an ensemble of two-level fluctuators in the oxide barrier of Al/AlOx/Al Josephson junctions. The fractional noise power spectrum of the critical-current and normal-state resistance has similar magnitudes and scale linearly with temperature, implying an equivalence between the two. Compiling our results and published data, we deduce the area and temperature scaling of the noise for AlOx barrier junctions. We find that the density of two-level fluctuators in the junction barrier is similar to the typical value in glassy systems. We discuss the implications and consistency with recent qubit experiments.

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Low frequency resistance and critical current fluctuations in Al-based Josephson junctions

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