Low-frequency noise in ambipolar carbon nanotube transistors

Ju H. Back, Sunkook Kim, Saeed Mohammadi, Moonsub Shim

Research output: Contribution to journalArticlepeer-review

Abstract

Low-frequency noise measurements on individual single-walled carbon nanotube transistors exhibiting ambipolar characteristics have been carried out. With a polymer electrolyte as gate medium, low-frequency noise can be monitored in both p-and n-channel operation of the same nanotube under the same chemical environment. 1/f noise in the p-channel of polymer electrolyte gated nanotube transistor is similar to that of back gate operation. However, most devices exhibit significantly larger noise amplitude in the n-channel operation that has a distinct dependence on the threshold voltage. A nonuniform energy distribution of carrier trapping/scattering sites is considered to explain these observations.

Original languageEnglish (US)
Pages (from-to)1090-1094
Number of pages5
JournalNano letters
Volume8
Issue number4
DOIs
StatePublished - Apr 1 2008

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Low-frequency noise in ambipolar carbon nanotube transistors'. Together they form a unique fingerprint.

Cite this