Low-frequency noise in AIGaN-GaN dopedchannel heterostructure field effect transistors grown on insulating SiC substrates

D. V. Kuksenkov; G. E. Giudice; H. Temkin; R. Gaska; A. Ping; I. Adesida

doi:10.1049/el:19981588

Low-frequency noise in AIGaN-GaN dopedchannel heterostructure field effect transistors grown on insulating SiC substrates

D. V. Kuksenkov, G. E. Giudice, H. Temkin, R. Gaska, A. Ping, I. Adesida

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Abstract

The authors report low-frequency noise measurements of dopedchannel GaN/AlGaN heterostructure field-effect transistors grown on insulating silicon carbide substrates. In the frequency range 1Hz-100kHz the observed noise is of the 1/f type, and the estimated value of the Hooge constant α_H, is ∼10^-3.

Original language	English (US)
Pages (from-to)	2274-2276
Number of pages	3
Journal	Electronics Letters
Volume	34
Issue number	23
DOIs	https://doi.org/10.1049/el:19981588
State	Published - Nov 12 1998

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Electrical and Electronic Engineering

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10.1049/el:19981588

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title = "Low-frequency noise in AIGaN-GaN dopedchannel heterostructure field effect transistors grown on insulating SiC substrates",

abstract = "The authors report low-frequency noise measurements of dopedchannel GaN/AlGaN heterostructure field-effect transistors grown on insulating silicon carbide substrates. In the frequency range 1Hz-100kHz the observed noise is of the 1/f type, and the estimated value of the Hooge constant αH, is ∼10-3.",

author = "Kuksenkov, {D. V.} and Giudice, {G. E.} and H. Temkin and R. Gaska and A. Ping and I. Adesida",

year = "1998",

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language = "English (US)",

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journal = "Electronics Letters",

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T1 - Low-frequency noise in AIGaN-GaN dopedchannel heterostructure field effect transistors grown on insulating SiC substrates

AU - Kuksenkov, D. V.

AU - Giudice, G. E.

AU - Temkin, H.

AU - Gaska, R.

AU - Ping, A.

AU - Adesida, I.

PY - 1998/11/12

Y1 - 1998/11/12

N2 - The authors report low-frequency noise measurements of dopedchannel GaN/AlGaN heterostructure field-effect transistors grown on insulating silicon carbide substrates. In the frequency range 1Hz-100kHz the observed noise is of the 1/f type, and the estimated value of the Hooge constant αH, is ∼10-3.

AB - The authors report low-frequency noise measurements of dopedchannel GaN/AlGaN heterostructure field-effect transistors grown on insulating silicon carbide substrates. In the frequency range 1Hz-100kHz the observed noise is of the 1/f type, and the estimated value of the Hooge constant αH, is ∼10-3.

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DO - 10.1049/el:19981588

M3 - Article

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JO - Electronics Letters

JF - Electronics Letters

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ER -

Low-frequency noise in AIGaN-GaN dopedchannel heterostructure field effect transistors grown on insulating SiC substrates

Abstract

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