Low-frequency noise in AIGaN-GaN dopedchannel heterostructure field effect transistors grown on insulating SiC substrates

D. V. Kuksenkov, G. E. Giudice, H. Temkin, R. Gaska, A. Ping, I. Adesida

Research output: Contribution to journalArticlepeer-review

Abstract

The authors report low-frequency noise measurements of dopedchannel GaN/AlGaN heterostructure field-effect transistors grown on insulating silicon carbide substrates. In the frequency range 1Hz-100kHz the observed noise is of the 1/f type, and the estimated value of the Hooge constant αH, is ∼10-3.

Original languageEnglish (US)
Pages (from-to)2274-2276
Number of pages3
JournalElectronics Letters
Volume34
Issue number23
DOIs
StatePublished - Nov 12 1998

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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