Abstract
The authors report low-frequency noise measurements of dopedchannel GaN/AlGaN heterostructure field-effect transistors grown on insulating silicon carbide substrates. In the frequency range 1Hz-100kHz the observed noise is of the 1/f type, and the estimated value of the Hooge constant αH, is ∼10-3.
Original language | English (US) |
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Pages (from-to) | 2274-2276 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 34 |
Issue number | 23 |
DOIs | |
State | Published - Nov 12 1998 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering