LOW-ENERGY, ULTRAHIGH VACUUM, SOLID-METAL ION SOURCE FOR ACCELERATED-ION DOPING DURING MOLECULAR BEAM EPITAXY.

A. Rockett; S. A. Barnett; J. E. Greene

doi:10.1116/1.582814

LOW-ENERGY, ULTRAHIGH VACUUM, SOLID-METAL ION SOURCE FOR ACCELERATED-ION DOPING DURING MOLECULAR BEAM EPITAXY.

A. Rockett, S. A. Barnett, J. E. Greene

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The design and operation of a compact single-grid, ultrahigh-vacuum-compatible, low-energy ion gun capable of utilizing gaseous, liquid, or solid source material are described. The gun can provide greater than 100 mu A/cm**2 at ion energies ranging from 20 to 500 ev. In initial experiments for accelerated-ion doping of (100)Si and (100)GaAs, several orders of magnitude increases in elemental As and Zn incorporation probabilities were observed.

Original language	English (US)
Pages (from-to)	306-313
Number of pages	8
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	2
Issue number	3
DOIs	https://doi.org/10.1116/1.582814
State	Published - 1984

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.582814

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LOW-ENERGY, ULTRAHIGH VACUUM, SOLID-METAL ION SOURCE FOR ACCELERATED-ION DOPING DURING MOLECULAR BEAM EPITAXY.

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