We present the results of Raman scattering studies of single-crystal SmB6 for temperatures down to 4 K and in magnetic fields up to 8 T. At temperatures below T*∼50 K the electronic Raman continuum exhibits an abrupt redistribution of scattering intensity around a temperature-independent ("isobestic") energy, Δc ∼290cm-1, reflecting the opening of a pseudogap which is larger than previously suggested by transport measurements. Additionally, the Raman response exhibits at least four well-defined excitations within the gap below T*. The field dependencies of some of these in-gap states are consistent with the expected g factor (geff=2/7) for the Sm3+ Γ8 level, suggesting that these gap edge states are crystal-electric-field excitations of the Sm3+ ion split by magnetoelastic coupling.
|Original language||English (US)|
|Number of pages||9|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - 1997|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics