Low dark current, long wavelength metal-semiconductor-metal photodetectors

W. A. Wohlmuth, P. Fay, C. Caneau, I. Adesida

Research output: Contribution to journalArticlepeer-review

Abstract

Dark current densities of 0.13 and 0.44pA/μm2 at biases of 5 and 10V, respectively, have been obtained for InAlAs/InGaAs metal-semiconductor-metal photodetectors with a 2μm electrode width and spacing, by placing the electrode tips and contact pads on top of an insulating layer of silicon nitride. This is the lowest known dark current density reported for InAlAs/InGaAs metal-semiconductor-metal photodetectors to date.

Original languageEnglish (US)
Pages (from-to)249-250
Number of pages2
JournalElectronics Letters
Volume32
Issue number3
DOIs
StatePublished - Feb 1 1996

Keywords

  • Metal-semiconductor-metal structures
  • Photodetectors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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