Low dark-current lateral amorphous-selenium metal-semiconductor-metal photodetector

Shiva Abbaszadeh, Nicholas Allec, Kai Wang, Karim S. Karim

Research output: Contribution to journalArticlepeer-review

Abstract

We report a lateral amorphous-selenium (a-Se) metal-semiconductor-metal detector with a blocking contact. The blocking contact, a polyimide layer, is shown to significantly reduce the dark current even at high applied biases that result in high photo-current-to-dark-current ratios, thus leading to wide dynamic range and high signal-to-noise ratio. The use of the polyimide blocking contact prevents the injection of both holes and electrons and improves considerably upon the high dark current of previously reported lateral a-Se detectors. The proposed detector demonstrates the feasibility of low-cost lateral a-Se devices for indirect conversion digital X-ray imaging applications such as chest radiography, fluoroscopy, and computed tomography.

Original languageEnglish (US)
Article number5957258
Pages (from-to)1263-1265
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number9
DOIs
StatePublished - Sep 1 2011

Keywords

  • Amorphous selenium (a-Se)
  • indirect conversion X-ray imaging
  • metal-semiconductor-metal (MSM) photodetector

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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