Abstract
Significant reduction in dark current has been demonstrated at logic level bias voltages in metal-semiconductor-metal photodetectors (MSMPD) by modifying the electric field distribution underneath the electrodes and reducing parasitic leakage current. A reduction in dark current by a factor of 10 and a suppression of breakdown effects was obtained between the conventional MSMPDs and the MSMPDs with the contact pads and electrode tips on silicon nitride. There was no measurable difference in either the responsivity of the bandwidth of these two devices.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 199-202 |
| Number of pages | 4 |
| Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| State | Published - 1996 |
| Event | Proceedings of the 1996 8th International Conference on Indium Phosphide and Related Materials - Schwabisch Gmund, Ger Duration: Apr 21 1996 → Apr 25 1996 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering