Low dark current amorphous silicon metal-semiconductor-metal photodetector for digital imaging applications

Sina Ghanbarzadeh, Shiva Abbaszadeh, Karim S. Karim

Research output: Contribution to journalArticlepeer-review

Abstract

A novel lateral amorphous silicon (a-Si) metal-semiconductor-metal photodetector architecture is proposed using an organic blocking layer. Fabricated devices exhibit low dark-current, high dynamic range, and a measured external quantum efficiency of 65%, which represents a considerable improvement over previously reported designs. The higher performance is enabled by the introduction of a thin organic blocking layer and subsequently operating at high electric-fields. Unlike industry standard p-i-n photodiodes, our high performance lateral photosensor does not require doped p+/n + layers. Thus, the reported device is compatible with current and previous generation a-Si thin film transistor display fabrication process making it promising for low-cost optical touch panel or diagnostic medical imaging applications.

Original languageEnglish (US)
Article number6709798
Pages (from-to)235-237
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number2
DOIs
StatePublished - Feb 1 2014

Keywords

  • Amorphous silicon
  • MSM photodetectors
  • dark-current
  • indirect conversion X-ray imaging

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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