Low-damage etching of silicon carbide in Cl₂-based plasmas

Keyphrases

• Silicon Carbide 100%
• Device Fabrication 100%
• Via Hole 100%
• Gas Mixture 100%
• Etching Conditions 100%
• Inductively Coupled Plasma Reactive Ion Etching 100%
• High Etch Rate 100%
• Hole Formation 100%
• Low Damage Etching 100%
• Fluorine Plasma 100%
• Etching Rate 50%
• Auger Electron Spectroscopy 50%
• Surface Damage 50%
• Minimal Surfaces 50%
• Surface Stoichiometry 50%
• Boron Trichloride 50%
• SiC Devices 50%
• SF6 Gas 50%

Material Science

• Silicon Carbide 100%
• Gas Mixture 100%
• Device Fabrication 66%
• Reactive Ion Etching 66%
• Surface Damage 33%
• Auger Electron Spectroscopy 33%