Abstract
Fluorine-based plasmas have been extensively reported for etching SiC in inductively coupled plasma reactive ion etching (ICP-RIE) systems for device fabrication and via-hole formation. The primary advantage of fluorine-based plasmas for etching SiC is that they yield very high etch rates. However, while high etch rates are very suitable for via-hole formation into SiC, lower etch rates are desirable for SiC device fabrication. The etching of SiC using ICP-RIE in various Cl2-based mixtures is reported. It was found that in comparison with F2-based gas mixtures, Cl2-based gas mixtures induced less damage on etched SiC surfaces. Optimized etching conditions using BCl3/SF6 gas mixtures that induce minimal surface damage on SiC are reported. Results of Auger electron spectroscopy showed that etching conditions produced negligible change in surface stoichiometry.
Original language | English (US) |
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Pages (from-to) | G420-G423 |
Journal | Journal of the Electrochemical Society |
Volume | 149 |
Issue number | 7 |
DOIs | |
State | Published - Jul 2002 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry