Abstract
A W-band single-balanced mixer and W-band LO amplifier, suitable for automotive collision-avoidance radar, have been designed and fabricated using a 0.18 μm direct ion-implanted GaAs MESFET process developed at the University of Illinois at Urbana-Champaign. As a downconverter with an LO frequency of 77 GHz and an RF frequency of 77.1 GHz, the coplanar rat-race mixer achieves a conversion loss of 14.7 dB at an LO power of +3.5 dBm. The coplanar LO amplifier exhibits 5 dB of gain over a 4 GHz bandwidth centered at 77 GHz.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1439-1442 |
| Number of pages | 4 |
| Journal | IEEE MTT-S International Microwave Symposium Digest |
| Volume | 3 |
| State | Published - 1998 |
| Event | Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Baltimore, MD, USA Duration: Jun 7 1998 → Jun 12 1998 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Radiation
- Electrical and Electronic Engineering